Конструктивно-технологические особенности высокотемпературных интегральных микросхем

Abstract

The problems of design and technological solutions for high-temperature analog microcircuits have been studied. Based on a review of publications devoted to the problems of designing high-temperature electronics products, it is shown that the most studied and used in mass production materials for the manufacture of crystals operating in the temperature range up to 300-350 ºС and in some cases up to 500 ºС are silicon carbide of the 4H-SiC and 6H-SiC. The use of gallium nitride GaN as a material for crystals makes it possible to expand the operating temperature range of semiconductor devices to 600 ºС. These materials have a large band gap, a high charge carrier saturation rate, and a low concentration of intrinsic charge carriers. One of the main factors limiting the growth rate of production of high-temperature electronics products is the complexity of packaging. It is shown that special attention of researchers is currently paid to the selection of case materials, materials for fastening crystals and materials of conductors connecting the contact pad of the crystals with the traverses of the case and coordinating the coefficient of thermal expansion of the crystal, the material for fastening the crystal and the housing seat on which the crystal is placed.