Charge Carrier Concentration Research Articles

Self‐Doped Mixed Ionic‐Electronic Conductors to Tune the Threshold Voltage and the Mode of Operation in Organic Electrochemical Transistors

AbstractOrganic mixed ionic‐electronic conductors with tunable doping, low threshold voltages, and air stability are crucial for bioelectronic applications. A homopolymer based on an alkoxy thiophene monomer and its copolymer with a thiophene carrying ethylene glycol side chains are synthesized and converted to self‐doped conjugated polyelectrolytes, P3HOTS‐TMA+, and P3HOTS‐TMA+‐co‐P3MEEET. The self‐doping occurs during the conversion to polyelectrolytes. Both polyelectrolytes show high electrical conductivity without any external dopants. UV–Vis–NIR spectroscopy and spectroelectrochemistry confirm excellent air stability of the doped state. In an organic electrochemical transistor (OECT), the P3HOTS‐TMA+ operates in depletion mode, while P3HOTS‐TMA+‐co‐P3MEEET exhibits accumulation mode of operation with low threshold voltage, both showing fast response times. On the other hand, the non‐doped homopolymer, P3MEEET, shows a high negative threshold voltage in accumulation mode. Thus, copolymerization with the self‐dopable monomer changes the mode of operation as well as the threshold voltage substantially. Ultraviolet photoelectron spectroscopy reveals a considerable reduction of the hole injection barrier for the self‐doped system P3HOTS‐TMA+. Mott‐Schottky analysis shows reduction in charge carrier concentration in the copolymer compared to the homopolymer. Thus, the copolymerization strategy with a self‐dopable monomer is an efficient tool for tuning the degree of doping leading to low threshold voltage in OECTs.

Photocatalytic and electrochemical investigation of Mn and Sn co-doped ZnO nanoparticles: Effect of doping concentration

The chemical precipitation method is employed to prepare the Mn and Sn co-doped ZnO nanoparticles with various doping concentrations. Debye Scherrer’s formula, Williamson-Hall equation and Halder-Wagner methods are used to calculate the crystallite size of the prepared nanoparticles. The addition of dopants enhances the periodicity of the atoms. The bond lengths, second nearest neighbor distances and bond angles are examined. The purity of the samples is confirmed using energy dispersive X-ray analysis technique. The process of doping reduces the maximum optical absorption. The dopants reduce the band gap of the prepared nanoparticles and the band gap ranges from 3.07 eV to 3.03 eV. The charge carrier concentrations are calculated from the optical band gap. The Hall coefficient of the prepared nanoparticles increases due to the addition of the dopants. The refractive index of the material is also examined. The quenching is observed in the photoluminescence spectrum due to the dopants. The dielectric properties and electric modulus depend on doping concentrations of Mn and Sn. The degradation of the Congo red and methylene blue dyes with prepared nanoparticles as catalysis is reported. The specific charge of the Mn and Sn co-doped ZnO-based electrode is analyzed using cyclic voltammetric study and galvanostatic charge–discharge technique.

Enhancement of gasochromic response to hydrogen of WO3 thin films by post-process modification and catalyst selection

The gasochromic properties of WO3 thin films deposited by electron beam evaporation were investigated, focusing on their structural, morphology and optical changes caused by heat treatment. Moreover, the influence of the thickness and type of catalyst on the gasochromic properties of WO3 was examined. X-ray diffraction measurements revealed that WO3 thin films annealed up to 473 K remained amorphous, whereas annealing at 673 K and above, initiated crystallization into a monoclinic structure. Gasochromic behaviour was observed in response to hydrogen exposure, with the most significant changes occurring in films annealed at 673 K with a thin adlayer of palladium catalyst. A gasochromic response of 1.84 was achieved for H2 concentration as low as 25 ppm. The process of gasochromic colouration was correlated with the changes of free charge carrier concentration calculated based on Drude free electron theory. XPS analysis confirms WO3 reduction under hydrogen exposure, validating proposed colouration mechanisms. These comprehensive findings offer insights into optimizing gasochromic thin films for various sensing applications.

Investigations on structural and opto-electrical characterization of Ag-TCNQ (metal-organic frameworks) as complex thin films for potential device applications

The silver- (7, 7, 8, 8-tetracyanoquinodimethane (Ag-TCNQ) organometallic complex was synthesized chemically as a nano-powder and thereafter deposited as a thin film by thermal evaporation. The monoclinic, needle-like, polycrystalline structure of the Ag-TCNQ complex was analyzed employing x-ray diffraction (XRD) and a scanning electron microscope (SEM). Whereas their chemical structure and stability were explored using Fourier transformation infrared (FTIR) techniques. The findings imply a charge transfer of degree −0.5 between TCNQ° and TCNQ−, as revealed by the shift of the bands of the C≡N stretching and the (C═C-H) bond positioned at 2198 and 824 cm−1, respectively. As well as the optical properties of Ag-TCNQ thin film were studied using spectrophotometric measuring in the wavelength ranging 200 to 2500 nm. The measurement of transmittance and reflectance spectra were employed to calculate the refractive index (n), dielectric constant, absorption index (k), surface and volume energy loss functions, and optical conductivity. In the normal dispersion zone, optical characteristics such free charge carrier concentration, infinity dielectric constant (ε ∞), lattice dielectric constant (ε L), oscillator energy (Eo), and dispersion energy (Ed) were estimated. Furthermore, the optoelectronic nonlinear optical features and electronic transitions for the Ag-TCNQ thin film were assessed. Finally, these findings are promising milestones on the path to providing convincing evidence for the synthesis of stoichiometric thermally stable Ag-TCNQ thin film by conventional thermal evaporation technique that is potential to be utilized in optoelectronic devices applications.

Optical Studies of Doped Two-Dimensional Lead Halide Perovskites: Evidence for Rashba-Split Branches in the Conduction Band.

Two-dimensional (2D) hybrid organic/inorganic perovskites are an emerging materials class for optoelectronic and spintronic applications due to strong excitonic absorption and emission, large spin-orbit coupling, and Rashba spin-splitting effects. For many of the envisioned applications, tuning the majority charge carrier (electron or hole) concentration is desirable, but electronic doping of metal-halide perovskites has proven to be challenging. Here, we demonstrate electron injection into the lower-energy branch of the Rashba-split conduction band of 2D phenethylammonium lead iodide by means of n-type molecular doping at room temperature. The molecular dopant, benzyl viologen (BV), is shown to compensate adventitious p-type impurities and can lead to a tunable Fermi level above the conduction band minimum and increased conductivity in intrinsic samples. The doping-induced carrier concentration is monitored by the observation of free-carrier absorption and intraband optical transitions in the infrared spectral range. These optical measurements allow for an estimation of the Rashba splitting energy ER ≈38 ± 4 meV. Photoinduced quantum beating measurements demonstrate that the excess electron density reduces the electron spin g-factor by ca. 6%. This work demonstrates controllable carrier concentrations in hybrid organic/inorganic perovskites and yields potential for room temperature spin control through the Rashba effect.

Optimizing inorganic SnS/ZrS2 heterojunction solar cells: Numerical analysis and performance insights

The SnS and ZrS2 have emerged as promising photovoltaic materials. This paper gives the first numerical analysis of inorganic SnS/ZrS2 heterojunction solar cells using SCAPS-1D. The study focuses on the effect of several parameters, such as thickness, doping charge carrier concentration, and energy bandgap, on fundamental solar cell properties in both the window and active layers. Our findings show that a variety of parameters influence solar cell performance, including built-in voltage, minority charge carrier lifetime, depletion breadth, charge carrier collection length, photogenerated current, and recombination rate. The maximum efficiency (η) attained in our simulated devices was 32.13 %, with FF of 84.51 % and Voc of 0.796 V. To achieve this efficiency, particular SnS parameters were used, such as a band gap of 1.00 eV, thickness of 5.0 μm, and doping charge carrier concentration of 1020 cm−3. In ZrS2, characteristics such as a band gap of 1.2 eV, thickness of 0.2 μm, and doping charge carrier content optimized 1020 cm−3 contribute to the observed efficiency. Our simulation results indicate that inorganic SnS/ZrS2 heterojunction devices have potential for solar device production that is cost-effective, large-scale, and high-efficiency. High performance enables a new path toward clean energy.

Variation of the metal-insulator phase transition temperature in VO2: An overview of some possible implementation methods

The great interest in VO2, which has stimulated a large number of studies and publications in recent decades, is caused by the reversible metal-insulator phase transition (MIT) that occurs at T = 68 °C and is accompanied by the transformation of a low-temperature dielectric (semiconductor) monoclinic phase into a high-temperature metallic phase with a rutile structure. Despite the ongoing discussion about the physical mechanism of this transition, the concomitant rapid change in the electrical and optical characteristics of the material by several orders of magnitude already finds numerous applications in optics, optoelectronics and sensors. At the same time, it became obvious that both the number and performance of the applications of VO2 would greatly increase, if it were possible to decrease the temperature of the phase transition without deterioration of other properties. This issue has become the subject of numerous studies. Mechanical stress and oxygen vacancies in the VO2 lattice, the concentration of free charge carriers, tuned by impurity doping or implantation, have been investigated and discussed as the main factors affecting the transition temperature. In this review, we intend to summarize and analyze the literature data on these ways, primarily those which are most efficient in influencing the transition temperature while maintaining a significant change in the modulation characteristics.

Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures

Solution-processed indium oxide (In2O3) thin films have been studied widely as active layers for transparent semiconducting devices because of their high charge carrier concentration, low absorbance, simple fabrication methods, and low cost. Several studies on improving the electrical characteristics of thin-film transistors (TFTs) by optimizing and fine-tuning the fabrication process and using various post-deposition treatments have been conducted to take full advantage of these semiconductor films in high-performance electronics. This study examined the effects of a focused plasma (FP) treatment on In2O3 thin films prepared using a simple solution process at 250 °C. The effects of the FP generated from N2 gas and two gas mixtures (N2-H2 and N2-H2-O2) on the electrical performance of the TFTs were analyzed. The FP treatment enhanced the electrical properties of the device, and the specific performance and stability parameters were improved by the treatment conditions. X-ray photoelectron spectroscopy showed that the FP treatment could effectively control the oxygen vacancies and carrier concentration in the solution-processed In2O3 thin films. Therefore, an FP beam is a viable method for optimizing In2O3 TFTs prepared at low temperatures for application in high-performance transparent electronic devices.

Optimizing the thermoelectric behavior of novel quaternary CoIrMnX (X=Sn, Sb) alloys through chemical potential or carrier concentration doping

Materials exhibiting significant polarisation at high spin rates are considered the most promising candidates for spintronic devices. This study investigates the mechanical, optical, spin-polarised electronic structure, magnetism, and thermoelectric properties of CoIrMnX (where X = Sn, Sb). We performed calculations of quaternary Heusler alloys using first-principles calculations. The CoIrMnSn and CoIrMnSb compounds have the most stable Type III crystal structures, according to the calculations performed on the alloys under investigation. We found that the two alloys, CoIrMnSn and CoIrMnSb, possessed a half-metallic ferromagnetic structure, characterised by indirect band gaps of 1.008 eV and 0.806 eV in the predominant spin channels, respectively. Both alloys demonstrate a significant overall magnetic moment of 5 and 6 μβ, respectively. CoIrMnX (where X = Sn, Sb) are ferromagnetic half-metals with 100 percent spin polarisation, according to the results. The results of the elastic constants demonstrate the alloys' mechanical stability. We also investigated optical characteristics such as dielectric function, absorption, reflectance, and optical conductivity. CoIrMnX (where X = Sn and Sb) acts as an efficient absorber in the ultraviolet region and possesses a high refractive index. Alloys exhibit considerable potential as viable candidates for implementation in spintronic devices. The maximum ZT value for CoIrMnSn (CoIrMnSb) is 0.915 (0.6619). To achieve this value, it is necessary to either reduce the charge carrier concentration to n = 0.0812 x 1020 (0.0952 x 1020) cm-3 or the μ to 0.83843 (0.83806) Ryd. Substantially examined materials demonstrate considerable potential for application in the field of thermoelectrics.

Plasmonic Near-Infrared-Response S-Scheme ZnO/CuInS2 Photocatalyst for H2O2 Production Coupled with Glycerin Oxidation.

Solar fuel synthesis is intriguing because solar energy is abundant and this method compensates for its intermittency. However, most photocatalysts can only absorb UV-to-visible light, while near-infrared (NIR) light remains unexploited. Surprisingly, the charge transfer between ZnO and CuInS2 quantum dots (QDs) can transform a NIR-inactive ZnO into a NIR-active composite. This strong response is attributed to the increased concentration of free charge carriers in the p-type semiconductor at the interface after the charge migration between ZnO and CuInS2, enhancing the localized surface plasmon resonance (LSPR) effect and the NIR response of CuInS2. As a paradigm, this ZnO/CuInS2 heterojunction is used for H2O2 production coupled with glycerin oxidation and demonstrates supreme performance, corroborating the importance of NIR response and efficient charge transfer. Mechanistic studies through contact potential difference (CPD), Hall effect test, and finite element method (FEM) calculation allow for the direct correlation between the NIR response and charge transfer. This approach bypasses the general light response issues, thereby stepping forward to the ambitious goal of harnessing the entire solar spectrum.

Modulation of charge transfer at the pentacene/graphene quantum dot interface by localized surface plasmonic resonance

We, for the first time, quantified localized surface plasmon resonance (LSPR)-induced charge transfer, and tuned charge carrier concentration in field-effect transistors (FETs) by incorporating silver nanoparticles (Ag NPs) at the pentacene/graphene quantum dot (GQD) interface. This resulted in a significant threshold voltage shift under illumination at a resonance frequency of 450 nm, primarily due to LSPR-induced charge transfer at the Ag NP/GQD interface. Further, the formation of an Ag NP-induced interface dipole in the dark accumulated holes in the pentacene layer in the absence of the gate electric field. Our research not only contributes to a deeper understanding of the interplay between plasmonics and semiconductor physics but also paves the way for new applications in electronics and photonics.

P‐108: High conductivity transparent electrode with In2O3 – ZnO periodic structure and gradient oxygen concentration

Multilayer structures based on the In‐Zn‐O (IZO) system with modulated oxygen doping have been developed as a TCF (transparent conductive film) alternative to ITO or IGZO layers in the LC and OLED displays. The minimum resistivity (3.37 Ohm*cm) and the maximum concentration of free charge carriers correspond to the layers synthesized in an atmosphere of pure argon, while the maximum mobility (39.18 cm2/V*s) corresponds to the layers synthesized in the atmosphere of both argon and oxygen 99.6%/0.4% mixture. Thin‐film periodic structures with gradient modulation of oxygen content in thickness have been fabricated by periodically changing the oxygen concentration in the composition of the working gas during spraying at a substrate temperature of 100 °C. The structures consist of alternating layers with a high concentration of free charge carriers and layers with high mobility. As a result of the single layers' thicknesses optimization the thin‐film periodic structures with a minimum resistivity of 2.89 Ohm*cm have been made. The resistivity is lower than in homogeneous layers of the same composition. The alternation of layers of optimal thickness provides high carrier mobility, it is inherent to layers synthesized in the atmosphere of 99.6/0.4 argon and oxygen mixture at high concentration. The mobility value is close to the value achieved in the layers synthesized in the pure argon atmosphere.This material provides fabrication of high quality, stable and low cost transparent electrodes or TFT layers with performances corresponding to parameters of traditional materials.

Upper Limit of the Mobility and Concentration of Charge Carriers in Fluoride Superionic Conductors with Fluorite and Tysonite Structures

Upper Limit of the Mobility and Concentration of Charge Carriers in Fluoride Superionic Conductors with Fluorite and Tysonite Structures

Modeling Charged Defects Using the Defect Energy Formalism With a Charge Sublattice Within a CALPHAD Framework

AbstractThe non‐stoichiometry of material compounds significantly influences their functional properties. In semiconductors, point defects determine whether a material is n‐type or p‐type and the concentration of charge carriers. Even in structural alloys and ion conductors used in batteries and fuel cells, non‐stoichiometry and dilute defects play an integral role in their function. The design of metal alloys has advanced rapidly with the aid of thermodynamic modeling using calculation of phase diagrams (CALPHAD) to predict the phases produced during different processing conditions. While thermodynamic modeling has been done previously by fitting experimental data, the advent of first‐principle techniques has enabled the computational prediction of material properties. The defect energy formalism (DEF) is described for modeling charged and uncharged defects in compounds, showing that it accurately predicts non‐stoichiometry using density functional theory (DFT), without fitting experiments. The model reproduces the expected defect and free‐charge carrier concentrations using the statistical mechanics approach commonly used in most DFT defect studies. Finally, the model is used to accurately predict the single‐phase region of PbTe with no fitting to measured defect concentrations. This method can revolutionize materials development of insulators, semiconductors, and even metals by allowing rapid DFT calculations to replace laborious experiments when dilute defects are involved.

Single crystal growth and transport properties of narrow-bandgap semiconductor RhP2

Abstract We report the growth of high-quality single crystals of RhP2, and systematically study its structure and physical properties by transport, magnetism, and heat capacity measurements. Single-crystal x-ray diffraction reveals that RhP2 adopts a monoclinic structure with the cell parameters a = 5.7347(10) Å, b = 5.7804(11) Å, and c = 5.8222(11) Å, space group P21/c (No. 14). The electrical resistivity ρ(T) measurements indicate that RhP2 exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions, respectively. The temperature-dependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration. We find that RhP2 has a high mobility μ e ∼ 210 cm2⋅V−1⋅s−1 with carrier concentrations n e ∼ 3.3 × 1018 cm−3 at 300 K with a narrow-bandgap feature. The high mobility μ e reaches the maximum of approximately 340 cm2⋅V−1⋅s−1 with carrier concentrations n e ∼ 2 × 1018 cm−3 at 100 K. No magnetic phase transitions are observed from the susceptibility χ(T) and specific heat C p(T) measurements of RhP2. Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

Assessment of superconducting and structural stability of advanced Y-123 and Y-358 ceramics with Tb/Y substitution in main matrices

In this study, the performances of Y1-x(Tb)xBa2Cu3O7-δ (Y-123) and Y3-x(Tb)xBa5Cu8O18-δ (Y-358) advanced ceramics prepared by sol-gel preparation route are investigated by the advanced characterization methods including X-ray diffraction (XRD), temperature dependent resistivity (ρ-T), vibrating sample magnetometry (VSM), scanning electron microscopy (SEM) and energy distribution spectroscopy (EDS) measurements and theoretical approaches. The EDS results illustrated that the Tb impurities were replaced successfully by the yttrium sites in the YBa2Cu3O7-y main matrix. Similarly, it was noted that the presence of excess impurities in the crystal structure led to the oxygenation problems. Electrical properties were determined by temperature dependent resistivity (ρ-T) measurements. ρ-T results indicated that Tb doping reduced the critical transition temperature (Tc) values for the transition to superconductivity for all samples in two YBCO phases. Although it appears to have negative effects of Tb ions on the number of mobile charge carrier concentrations in the σ antibonding in-plane Cu-O bonds, bipolaron formations in the polarizable lattices, oxidation states, and amplitude of the pair wave function of both phases, the other valuable properties (morphology, crystallinity quality, interaction between adjacent layers, critical current density, and flux pinning ability) were noted to improve remarkably in the case of the optimum amount in the Y-123 superconducting phase. In this context, the Y-358 superconducting phase was harshly affected by the substitution due to the change of the ortorombicity, localization problem, impurity phases, structure stabilization, crystal structure quality, crystallization system, homogeneities of oxidation states, oxygen ordering degree, and impurity scatterings. Besides, the analysis of the fluctuation induced conductivity indicated that the Y-123 ceramics with longer c-axis coherence length and less anisotropic nature exhibited well superconducting properties. Additionally, the doping ratio of x=0.01 led to the formation and distribution of more nucleation centers for the thermal fluxon motions of 2D pancake vortices. Similarly, the optimum Tb doped Y-123 system exhibited much durable to applied field strengths due to the best interaction quality between grains. Accordingly, this study recommended that the Y1-x(Tb)xBa2Cu3O7-δ advanced ceramic structure with new functionalities can find much more application areas in innovative, heavy-industrial technologies, and advanced engineering-related sectors.

Effect of surface states and in-plane deformation on transport properties of charge carriers in bismuth films

Since the energy spectrum of bismuth charge carriers is highly sensitive to mechanical deformations, studying their influence, leading to an increase or decrease in the overlap of actual extrema, on the transport properties of charge carriers in ultrathin bismuth films makes it possible to investigate the combination of manifestations of the quantum size effect and metallic surface states. In this work, the temperature dependencies of the electrical and galvanomagnetic properties of thin bismuth films (10–1250 nm) are studied under conditions of in-plane tensile and compressive deformation. Deformations are created as a result of the difference in the coefficients of thermal expansion of the film and substrate materials. Silicon with an oxidized surface, mica, and polished cleavage (111) CaF2 are used in order to create either tensile and compressive deformations. The presence of film deformations is confirmed by XRD. The magnitude of deformation is calculated based on the CTEs of the materials. The absence of mechanical stress relaxation or the formation of additional defects during temperature measurements is confirmed by the absence of hysteresis of properties in the range of 77–300 K. Based on the experimental results, the mobilities and concentration of charge carriers are calculated within the framework of the two-band model. As the film thickness decreases to less than 100 nm, an increase in the charge carrier concentration is observed, which is associated with metallic surface states. It is shown that the magnitude of the effect of deformation on the concentration of charge carriers in films of all thicknesses remains unchanged.

Photocatalytic doping of organic semiconductors

Chemical doping is an important approach to manipulating charge-carrier concentration and transport in organic semiconductors (OSCs)1–3 and ultimately enhances device performance4–7. However, conventional doping strategies often rely on the use of highly reactive (strong) dopants8–10, which are consumed during the doping process. Achieving efficient doping with weak and/or widely accessible dopants under mild conditions remains a considerable challenge. Here, we report a previously undescribed concept for the photocatalytic doping of OSCs that uses air as a weak oxidant (p-dopant) and operates at room temperature. This is a general approach that can be applied to various OSCs and photocatalysts, yielding electrical conductivities that exceed 3,000 S cm–1. We also demonstrate the successful photocatalytic reduction (n-doping) and simultaneous p-doping and n-doping of OSCs in which the organic salt used to maintain charge neutrality is the only chemical consumed. Our photocatalytic doping method offers great potential for advancing OSC doping and developing next-generation organic electronic devices.

Luminescence of CsLa1-хCeхSiS4 thiosilicate solid solution: From STE to Ce3+ emission

A series of single crystals of CsLa1-хСехSiS4 monophasic solid solution (x = 0–1) has been obtained for the first time by high-temperature flux synthesis. Methods of XRD and chemical analysis, absorption and low-temperature (from T = 5 K) luminescent spectroscopy were used. The results of the band scheme calculating using density functional theory correlate with spectroscopy data. One non-elementary d → f emission band of Ce3+ ions is observed in the region of 520 nm in the luminescence spectra at room temperature at any value of the x parameter. The luminescence decay kinetics of Ce3+ ions upon excitation by a pulsed electron beam, X-ray synchrotron radiation or intracenter photoexcitation is characterized by a nanosecond component. As the parameter x increases, the decay time is reduced from 132 ns (x = 0.005) to 0.88 ns (x = 1). The luminescence decay kinetics upon photoexcitation at x = 0.005–0.12 is characterized by monoexponential decay with τ = 31.4 ± 0.2 ns. Concentration quenching of the Ce3+ ion photoluminescence is not observed up to the value of the parameter x = 0.12; it only appears at x = 1. The anomalously short decay time of the Ce3+ ions luminescence in CsCeSiS4 upon both X-ray excitation and photoexcitation is associated with concentration quenching.At temperature 5 K, new intense bands at 408 and 688 nm in addition to the Ce3+ emission band observed in the photoluminescence spectra of nominally pure CsLaSiS4 or at the lowest parameter value x = 0.005. These bands correspond to the luminescence of self-trapped excitons (STE) and defects. With increasing x parameter, the STE emission band is reabsorbed by the absorption of Ce3+ ions and is quenched due to the resonance energy transfer STE → Ce3+ center. Thermoluminescence glow curves of CsLa1-xCexSiS4 irradiated with X-ray at T = 90 K are characterized by several low temperature intense peaks, which indicates a high concentration of charge carrier traps.

Effect of CdS on the Electrical Conductivity of Polyvinyl Alcohol (PVA) and Potassium Iodide (KI) thin films

In the past two decades, solid polymer electrolytes (SPEs) have attracted attention as a platform for electrochemical devices. Here polymer-based electrolytes have the advantage that they can be grown in a thin film, plus they are leak-proof. In the present work, we have used PVA:KI as the host polymer–salt complex with a composition of 85:15. Further, this PVA:KI complex dispersed with different wt% of CdS. Standard solution cast techniques have been used for thin film preparation. All prepared samples are characterized to study conductivity and structural changes. A maximum ionic conductivity of 2.47 X 10-7 S/cm was observed for 9wt% of CdS. Also, the band gap of these films was calculated and found to be between 2.4 to 2.9 eV. Also, the concentration and mobility of charge carriers were calculated to explain the change in conductivity pattern. This calculation was performed with the Schutt & Gerdes model. It is observed that the conductivity pattern mainly follows the concentration of charge carriers. DOI: https://doi.org/10.52783/pst.370