Optimizing inorganic SnS/ZrS2 heterojunction solar cells: Numerical analysis and performance insights

Abstract

The SnS and ZrS2 have emerged as promising photovoltaic materials. This paper gives the first numerical analysis of inorganic SnS/ZrS2 heterojunction solar cells using SCAPS-1D. The study focuses on the effect of several parameters, such as thickness, doping charge carrier concentration, and energy bandgap, on fundamental solar cell properties in both the window and active layers. Our findings show that a variety of parameters influence solar cell performance, including built-in voltage, minority charge carrier lifetime, depletion breadth, charge carrier collection length, photogenerated current, and recombination rate. The maximum efficiency (η) attained in our simulated devices was 32.13 %, with FF of 84.51 % and Voc of 0.796 V. To achieve this efficiency, particular SnS parameters were used, such as a band gap of 1.00 eV, thickness of 5.0 μm, and doping charge carrier concentration of 1020 cm−3. In ZrS2, characteristics such as a band gap of 1.2 eV, thickness of 0.2 μm, and doping charge carrier content optimized 1020 cm−3 contribute to the observed efficiency. Our simulation results indicate that inorganic SnS/ZrS2 heterojunction devices have potential for solar device production that is cost-effective, large-scale, and high-efficiency. High performance enables a new path toward clean energy.