Abstract
A series of single crystals of CsLa1-хСехSiS4 monophasic solid solution (x = 0–1) has been obtained for the first time by high-temperature flux synthesis. Methods of XRD and chemical analysis, absorption and low-temperature (from T = 5 K) luminescent spectroscopy were used. The results of the band scheme calculating using density functional theory correlate with spectroscopy data. One non-elementary d → f emission band of Ce3+ ions is observed in the region of 520 nm in the luminescence spectra at room temperature at any value of the x parameter. The luminescence decay kinetics of Ce3+ ions upon excitation by a pulsed electron beam, X-ray synchrotron radiation or intracenter photoexcitation is characterized by a nanosecond component. As the parameter x increases, the decay time is reduced from 132 ns (x = 0.005) to 0.88 ns (x = 1). The luminescence decay kinetics upon photoexcitation at x = 0.005–0.12 is characterized by monoexponential decay with τ = 31.4 ± 0.2 ns. Concentration quenching of the Ce3+ ion photoluminescence is not observed up to the value of the parameter x = 0.12; it only appears at x = 1. The anomalously short decay time of the Ce3+ ions luminescence in CsCeSiS4 upon both X-ray excitation and photoexcitation is associated with concentration quenching.At temperature 5 K, new intense bands at 408 and 688 nm in addition to the Ce3+ emission band observed in the photoluminescence spectra of nominally pure CsLaSiS4 or at the lowest parameter value x = 0.005. These bands correspond to the luminescence of self-trapped excitons (STE) and defects. With increasing x parameter, the STE emission band is reabsorbed by the absorption of Ce3+ ions and is quenched due to the resonance energy transfer STE → Ce3+ center. Thermoluminescence glow curves of CsLa1-xCexSiS4 irradiated with X-ray at T = 90 K are characterized by several low temperature intense peaks, which indicates a high concentration of charge carrier traps.
Published Version
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