Carbon Impurity Concentration Research Articles

Investigation on the edge cooling threshold of the density limit in the J-TEXT tokamak with limiter and divertor configurations

Cooling of the plasma edge is widely considered to be a key element in the density limit (DL) of tokamaks. This paper investigates the critical edge cooling threshold of the DL by exploring various plasma configurations in the joint-Texas experimental tokamak. Notably, significant differences in the edge electron temperature in the vicinity of the last closed flux surface were observed between the limiter and divertor configurations. However, the electron temperature drops to a similar level in the vicinity of q= 3 surface close to DL, independent of the magnetic field configuration. In addition, to evaluate the reliability of the critical edge cooling threshold, experiments were conducted by increasing the carbon impurity content to enhance the edge cooling rate. These experiments involved two approaches to increase the carbon impurity content: methane injection and penetration of a graphite solid source. Results from these experiments indicate that the temperature threshold of the q = 3 surfaces remains consistent even with a stronger edge cooling rate. The consistency observed in the electron temperature threshold near the q = 3 surface, regardless of magnetic configuration or edge cooling rate, could help refine existing theoretical and simulation works and improve the prediction accuracy of the DL disruption.

Tunability of electronic and thermoelectric properties of hexagonal boron nitride with carbon impurities under magnetic field: Tight binding investigation

Utilizing the Kubo-Greenwood formula, Tight Binding calculations were employed to examine the electronic and thermoelectric properties of hexagonal boron nitride (h-BN) with carbon impurity instead of boron, nitrogen and pairs boron-nitrogen. The electronic properties of the pristine monolayer BN are markedly impacted by the introduction of carbon dopants and its band gap reduction is directly correlated with the concentration of carbon impurities. The electronic properties of doped h-BN are influenced by the presence of a magnetic field, leading to subband separation and band gap narrowing, independent of the impurity types. The thermal conductivity and magnetic susceptibility of the CBN-doped monolayer BN structure are higher than those of the BC and NC doped h-BN structures and for all structures, their properties have a strong dependence on the magnetic field. The Lorenz Number for all structures has peak at the TM temperature which shifts to a lower temperature as the impurity concentration decreases.

Plasma-enhanced atomic layer deposition of crystalline GaN thin films on quartz substrates with sharp interfaces

Polycrystalline hexagonal GaN films were deposited directly on amorphous quartz (fused glass) substrates at 250 °C by plasma-enhanced atomic layer deposition. An atomically sharp GaN/quartz interface is observed from transmission electron microscopy images, which is further demonstrated by x-ray reflectivity measurements. The atomic force microscopy image reveals a smooth surface of GaN. The concentrations of oxygen and carbon impurities in GaN are 6.3 and 0.64%, respectively, according to x-ray photoelectron spectroscopy analysis. The electron mobility measured by Hall is 1.33 cm2 V−1 s−1. The results show that high-quality GaN films are obtained on amorphous quartz substrates, and GaN/quartz can be used as a template for the fabrication of GaN-based devices.

Computational studies of impurity migration during induction stirring of molten uranium

Understanding and controlling impurity behavior in actinide metal casting processes are foundational for efficient part production yet remain major challenges for researchers and industry. To help provide insight regarding impurity distribution during actinide metal casting, we have developed computational fluid dynamics (CFD) models for a laboratory-scale system using commercial and open-source codes. This article describes multiple experiment-informed models designed to simulate a specific laboratory system in which uranium melt, containing a known starting concentration of carbon impurity, is electromagnetically stirred in an induction furnace. The goal of the simulations is to predict the motion of impurity particles in the form of uranium monocarbide in the velocity field of the melt. Prior to simulating the uranium–carbon system, numerical models were validated using a previously published nonradioactive experimental system. Effects of the size and shape of impurity particles in the models were investigated and agree with experimental findings. Simulation of smaller particles (less than 50 μm) shows more homogenous distribution throughout the stirred melt. With increased particle size (100 μm), the body forces, which include the buoyancy force, dominate over the drag force, causing larger particles to move toward the crucible walls and upward in the system.

Mechanisms of the Redistribution of Carbon Contamination in Films Formed by Atomic Layer Deposition

The depth distribution of carbon impurities in hafnium oxide films obtained by plasma-assisted atomic layer deposition is studied experimentally and theoretically. An analytical model is proposed that describes the dependence of the carbon impurity concentration profile in the film. The model takes into account the fact that the formation of a carbon impurity in the growing film may be caused by the incomplete oxidation of the organometallic precursor. The diffusion redistribution of impurities is determined by mech-anisms that take into account the presence of carbon in different kinds of states: an insoluble state (carbides, carbonates), a highly mobile state (CO, CO2), and an unstable state whose lifetime is longer than the film’s growth time. The possibility of controlling the carbon impurity both in deep and near-surface layers is shown. The predictions of the model are confirmed experimentally using the mass spectrometry of the secondary ions in the films obtained by atomic layer deposition. To test the theory, special structures of hafnium oxide are developed, consisting of several layers, in which the time of the plasma exposure to the sample is varied at the same dosage of the organometallic precursor. The layer with the shortest exposure time to the plasma is deposited on the substrate, then the same number of cycles on the next layer take place, provided that the exposure time is increased by a factor of n. This makes it possible to deepen the transition zones and thus pro-tect them from the effects of the atmosphere.

Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence

In this work, a technique for quantifying carbon doping concentrations in GaN:C/AlGaN buffer structures using cathodoluminescence (CL) is presented. The method stems from the knowledge that the blue and yellow luminescence intensity in CL spectra of GaN varies with the carbon doping concentration. By calculating the blue and yellow luminescence peak intensities normalised to the peak GaN near-band-edge intensity for GaN layers of known carbon concentrations, calibration curves that show the change in normalised blue and yellow luminescence intensity with carbon concentration in the 1016 − 1019 cm−3 range were derived at both room temperature and 10 K. The utility of such calibration curves was then examined by testing against an unknown sample containing multiple carbon-doped GaN layers. The results obtained from CL using the normalised blue luminescence calibration curves are in close agreement with those from secondary-ion mass spectroscopy (SIMS). However,the method fails when applying calibration curves obtained from the normalised yellow luminescence likely due to the influence of native VGa defects acting in this luminescence region. Although this work shows that indeed CL can be used as a quantitative tool to measure carbon doping concentrations in GaN:C, it is noted that the intrinsic broadening effects innate to CL can make it difficult to differentiate between the intensity variations in thin ( < 500 nm) multilayered GaN:C structures such as the ones studied in this work.

Electrochemical surface rehydrogenation of boron-doped diamond electrodes after electrochemical polishing

Non-diamond carbon impurity and surface roughness are features that can affect the response of boron-doped diamond (BDD) electrodes. Herein, we report on the electropolishing of BDD electrodes carried out in the presence of acetic and sulfuric acid for different times (1, 2, and 4 h). The wet electrochemical treatment smooths the polycrystalline diamond surface and reduces the non-diamond sp2 carbon impurity content while increasing the surface oxygen content. Changes in surface texture and microstructure were revealed by atomic force microscopy, Raman spectroscopy, and cyclic voltammetry. Subsequently, the surface oxygen content was reduced by increasingly severe cathodic pretreatments (CPTs). This was revealed by changes in the voltametric response for the [Fe(CN)6]3−/4– and ascorbic acid (AA) redox systems, as both exhibit electron transfer kinetics sensitive to the level of oxidation of the BDD surface. For [Fe(CN)6]3−/4–, greater ∆Ep values were obtained for the electropolished (EP-BDD) electrodes, as compared to the as received (AR-BDD) electrode. However, after CPTs the EP-BDD electrodes exhibited smaller ∆Ep values (∼60 mV), which indicate significantly improved electrochemical reversibility and faster electron-transfer kinetics caused by the decreased level of surface oxidation (greater hydrogenation). The increased surface oxygen content brought on by the electropolishing process had also a significant effect on the AA oxidation peak potential (Eap), making it at least ∼140 mV more positive than that for the AR–BDD electrode. However, after CPTs the Eap values for the EP–BDD electrodes became at least ∼0.1 V less positive than that for the AR–BDD electrode, indicating that the surface of the EP-BDD electrodes possesses less surface carbon‑oxygen functional groups (i.e., it is more hydrogenated). The combination of electropolishing and cathodic pretreatment is a way to process the BDD electrode surface to create a smoother, low oxygen surface in much the same way as a hydrogen plasma treatment does.

Numerical Analysis of the Influence of Size Upgrading on Oxygen and Carbon Impurities in Casting Silicon

Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidification of silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidification furnaces are studied. The simulation results show that the distributions of oxygen and carbon impurities change significantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.

H2 Plasma and PMA Effects on PEALD-Al2O3 Films with Different O2 Plasma Exposure Times for CIS Passivation Layers

In this study, the electrical properties of Al2O3 film were analyzed and optimized to improve the properties of the passivation layer of CMOS image sensors (CISs). During Al2O3 deposition processing, the O2 plasma exposure time was adjusted, and H2 plasma treatment as well as post-metallization annealing (PMA) were performed as posttreatments. The flat-band voltage (Vfb) was significantly shifted (ΔVfb = 2.54 V) in the case of the Al2O3 film with a shorter O2 plasma exposure time; however, with a longer O2 plasma exposure time, Vfb was slightly shifted (ΔVfb = 0.61 V) owing to the reduction in the carbon impurity content. Additionally, the as-deposited Al2O3 sample with a shorter O2 plasma exposure time had a larger number of interface traps (interface trap density, Dit = 8.98 × 1013 eV-1·cm-2). However, Dit was reduced to 1.12 × 1012 eV-1·cm-2 by increasing the O2 plasma exposure time and further reduced after PMA. Consequently, we fabricated an Al2O3 film suitable for application as a CIS passivation layer with a reduced number of interface traps. However, the Al2O3 film with increased O2 plasma exposure time deteriorated owing to plasma damage after H2 plasma treatment, which is a method of reducing carbon impurity content. This deterioration was validated using the C-V hump and breakdown characteristics.

A Study on the Increase of Leakage Current in AlGaN Detectors with Increasing Al Composition.

The dark leakage current of AlxGa1-xN Schottky barrier detectors with different Al contents is investigated. It was found that the dark leakage of AlxGa1-xN detectors increased with increasing Al content. The XRD and SIMS results showed that there was no significant difference of the dislocation density and carbon impurity concentration in five AlxGa1-xN samples with different Al content. This was likely not the main reason for the difference in dark leakage current of AlxGa1-xN detectors. However, the results of positron annihilation showed that the vacancy defect concentration increased with increasing Al content. This was consistent with the result that the dark leakage current increased with increasing Al content. With the increase of vacancy concentration, the vacancy defect energy levels also increased, and the probability of electron tunneling through defect levels increased. In contrast, the Schottky barrier height decreased, which eventually led to the increase of dark leakage current. This discovery should be beneficial to an accurate control of the performance of AlxGa1-xN detectors.

Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor

Tungsten oxide–silicon dioxide (WOx–SiOy) composite thin films were deposited for the first time via the remote oxygen plasma-enhanced atomic layer deposition (ALD) process using a novel metal-organic heteronuclear and heteroleptic precursor, bis(tert-butylimido)bis(trimethylsilylmethyl)tungsten. Self-limiting ALD growth was demonstrated over a wide temperature window of 203–328 °C with growth per cycle decreasing with increasing temperature from 0.75 to 0.4 Å/cycle, respectively. Residual gas analysis revealed ligand competition and showed that ligand reaction during ALD nucleation and growth was a function of deposition temperature, thereby affecting the film composition. As the temperature increased from 203 to 328 °C, the film composition [W/(Si + W)] ranged from 0.45 to 0.53. In addition, the carbon impurity content was reduced and the refractive index increased from 1.73 to 1.96, the density increased from 4.63 to 5.6 g/cm3, and the optical bandgap decreased from 3.45 to 3.27 eV. Grazing angle x-ray diffraction indicated that as-deposited films were amorphous. Upon annealing in O2 at 500 °C or higher, depending on deposition temperature, films are crystalized into the triclinic WO3 phase. At the same time, WO3 is sublimed from the surface and films are reduced in thickness.

Electrical and Structural Properties of Semi-Polar-ZnO/a-Al2O3 and Polar-ZnO/c-Al2O3 Films: A Comparative Study.

In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a-(100) and c-(001) oriented Al2O3 substrate are reported. The films were grown in the same growth conditions and parameters at six different growth temperatures (Tg) ranging from 100 °C to 300 °C. All as-grown and annealed films were found to be polycrystalline, highly (001) oriented for the c-Al2O3 and highly (101) oriented for the a-Al2O3 substrate. The manifestation of semi-polar-(101) and polar (001)-oriented ZnO films on the same substrate provided the opportunity for a comparative study in terms of the influence of polarization on the electrical and structural properties of ZnO films. It was found that the concentration of hydrogen, carbon, and nitrogen impurities in polar (001)-oriented films was considerably higher than in semi-polar (101)-oriented ZnO films. The study showed that when transparent conductive oxide applications were considered, the ZnO layers could be deposited at a temperature of about 160 °C, because, at this growth temperature, the high electrical conductivity was accompanied by surface smoothness in the nanometer scale. On the contrary, semi-polar (101)-oriented films might offer a perspective for obtaining p-type ZnO films, because the concentration of carbon and hydrogen impurities is considerably lower than in polar films.

Structure and properties of titanium hydride powder obtained from titanium sponge by SHS hydrogenation

The results of the study of the structure and properties of titanium hydride powders obtained from titanium sponge by SHS hydrogenation and mechanical grinding are presented. Hydrogenation was carried out in a reactor at a constant hydrogen pressure of 3 MPa. After passing the combustion wave, the hot titanium sponge was cooled to room temperature in a hydrogenatmosphere. As a result, titanium hydride spongy granules with a hydrogen content of 4.2 wt.% were obtained. Titanium hydride was ground in a ball mill and divided into 4 fractions corresponding to the fractional composition of titanium powder PTK, PTS, PTM and PTOM. Particle size analysis showed that the samples of the PTK and PTOM powders have a narrower particle distribution in comparison with the PTS and PTM ones. Further, obtained powders chemical composition and surface morphology studies were carried out and bulk density, compaction, pycnometric density and specific surface area were determined. According to the chemical analysis results the content of carbon and oxygen impurities decreases during SHS-hydrogenation and the iron content slightly increases during mechanical grinding depending on the grinding time. The study of morphology showed that the hydride titanium particles have an irregular fragmentary shape, such morphology is characteristic of powders obtained by this technology. The surface structure has partially preserved structure of the initial titanium sponge and consists of elongated oriented grains. It is established that with a decrease in the particle size, the bulk density decreases, and the compaction increases. Pycnometric density and specific surface area values are approximately equal for all powder samples.

Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux

We have grown a high growth rate, and low dislocation density (DD) Ga-polar GaN (DD: 4 × 105/cm2) and N-polar GaN (DD: 8 × 105/cm2) bulk single crystal using Na Flux. Variable temperature PL shows that the yellow luminescence (YL) peak energy of Ga-polar GaN (Ga-GaN) and N-polar GaN (N-GaN) are 2.31–2.30 eV and 2.28–2.26 eV, respectively. It can be found that N-GaN has a more vigorous YL intensity and a lower peak energy of YL than Ga-GaN. The variable-temperature and variable-power PL results suggest that the YL origin may be a donor-acceptor pair defect. Dislocations and defects associated with gallium vacancies that could cause YL behavior were ruled out by dislocation density determination and Raman spectroscopy, respectively. The different concentrations of carbon and oxygen in the Ga-GaN and N-GaN that were associated with the adsorption energy were discussed and proved by SIMS. The Raman results show that the carrier concentrations of Ga-polar and N-polar GaN are comparable, which may be because the higher content of carbon impurities in N-polar GaN can act as a deep acceptor to compensate for its higher content of shallow donor impurity oxygen. Therefore, it is suggested that carbon-related energy level transitions are the primary source of YL in both Ga-polar and N-polar GaN, and the compensating effect of carbon impurities leads to similar carrier concentrations in both polar planes.

NiB-CrC Coatings Prepared by Magnetron Sputtering Using Composite Ceramic NiCr-BC Target Produced by Detonation Spray Coating.

A metal–ceramic composite target for magnetron sputtering was fabricated for the first time by a robotic complex for the detonation spraying of coatings equipped with a multi-chamber detonation accelerator. A mixture of metal and ceramic NiCr/B4C powders was sprayed onto the copper base of the cylindrical composite target cathode. The study of the structure of a metal–ceramic composite coating target using scanning electron microscopy showed that the coating material is dense without visible pores; the elemental composition is evenly distributed in the material. The study of the cathode sputtering area after deposition in the DC mode showed that there are uniform traces of annular erosion on the target surface. The obtained cathode target with an NiCr-70B4C coating was used to deposit the NiB-Cr7C3 coating on flat specimens of 65G steel using equipment for magnetron sputtering UNICOAT 200. The coating was applied in the Direct Current mode. A dense NiB-Cr7C3 coating with a thickness of 2 μm was obtained. The NiB-Cr7C3 coating has a quasi-amorphous structure. The microstructures and concentration of oxygen and carbon impurities throughout the entire thickness of the coating were investigated by means of transmission electron microscopy. The results of the study show that the coatings have a nanocrystalline multi-phase structure. The microhardness of the NiB-Cr7C3 coating reached 10 GPa, and the adhesion fracture load exceeded 16 N. The results will open up new prospects for the further elaboration of technology for obtaining original composite cathodes for magnetron sputtering using detonation spraying of coatings.

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors.

The spectral response properties of AlGaN Schottky barrier detectors with different Al content were investigated. It was found that the responsivity of AlGaN detectors decreases with increase in Al content in AlGaN. It was found that neither dislocation density nor the concentration of carbon and oxygen impurities made any remarkable difference in these AlGaN devices. However, the positron annihilation experiments showed that the concentration of Al or Ga vacancy defects (more likely Ga vacancy defects) in AlGaN active layers increased with the increase in Al content. It is assumed that the Al or Ga vacancy defects play a negative role in a detector’s performance, which increases the recombination of photogenerated carriers and reduces the detector responsivity. It is necessary to control the concentration of vacancy defects for the high performance AlGaN detectors.

Study of MIS structures based on CdHgTe and HfO2 applied by PEALD

We investigate the HfO2/Hg0.78Cd0.22Te interface fabricated by plasma-enhanced atomic layer deposition (PEALD) at 120 °C During the deposition of HfO2, no donor-like defects are introduced into mercury cadmium telluride. X-ray photoelectron spectroscopy and ellipsometry were used to establish the optimal process regime at 120 °C and to demonstrate how HfO2 layer composition and growth rate per cycle depend on post-plasma purge time; the optimum is achieved at 6 s. Increasing the post-plasma purge time decreases the carbon and nitrogen impurity concentration in the HfO2 layer. Measurements of the admittance of metal-insulator-semiconductor (MIS) structures over the surface of a sample show that the electro-physical properties are uniform. We discuss the method of measuring the admittance of MIS structures that allows us to minimize the contribution of slow states with trapped charge on shape and shift of the C–V curve. The results demonstrate that the densities of fixed charge, slow states, and fast interfacial traps at the HfO2/MCT interface are greater than that for Al2O3/MCT (also formed by PEALD). The interface trap density is estimated from a normalized parallel conductance map, and the HfO2 film adheres well.

Influence of low-Z impurity on the stabilization of m/n = 2/1 tearing/locked modes in EAST

The impact of the low-Z impurity concentration on mode stabilization has been investigated in the EAST tokamak. A series of tearing modes (TMs) with multiple helicities are excited by the low-Z (carbon) impurity concentration, and the dominant mode structure features m/n = 2/1 magnetic islands that propagate in the electron diamagnetic drift direction (m and n are poloidal and toroidal mode numbers, respectively). The m/n = 2/1 locked modes (LMs) can be formed by the redistribution of low-Z impurity concentration, and are unlocked spontaneously due to the decrease in the impurity concentration, where the width of the magnetic islands can reach w ≈ 5 cm (w/a ≈ 0.1, a is the minor radius). The increase in the electromagnetic brake torque is the primary reason for the mode locking, and the ‘O’-point of the m/n = 2/1 magnetic islands is locked by the tungsten protector limiter (toroidal position: −0.4π ⩽ ϕ ⩽ −0.3π) with separation of Δϕ ≈ 0. The 3D asymmetric structure of the m/n = 2/1 magnetic islands is formed for the interaction with the tungsten protector limiter, and the electromagnetic interaction decreases dramatically for the separation of Δϕ ⩾ 0.2π. The mode excitation and locking mechanisms can be illustrated by the ‘hysteresis effect’ between the low-Z impurity concentration and the width of the m/n = 2/1 magnetic islands; namely, the growth of magnetic islands is modulated by the low-Z impurity concentration, and the rotation velocity is decelerated accordingly. However, the intrinsic mechanism for the unlocking of m/n = 2/1 LMs is complicated by considering the concentration of the low-Z impurity, and the possible unlocking mechanism is discussed. Therefore, understanding the relationship between the impurities and magnetic islands is more important for optimization of the control techniques (resonant magnetic perturbations → LMs, electron cyclotron resonant heating (ECRH) → neoclassical tearing mode (NTM), impurity seeding → major collapse, etc).

In Situ LID and Regeneration of PERC Solar Cells from Different Positions of a B-Doped Cz-Si Ingot

In order to investigate the light-induced-degradation (LID) and regeneration of industrial PERC solar cells made from different positions of silicon wafers in a silicon ingot, five groups of silicon wafers were cut from a commercial solar-grade boron-doped Czochralski silicon (Cz-Si) ingot from top to bottom with a certain distance and made into PERC solar cells by using the standard industrial process after measuring lifetimes of minority carriers and concentrations of boron, oxygen, carbon, and transition metal impurities. Then, the changes of their I - V characteristic parameters (efficiency η , open-circuit voltage V oc , short-circuit current I sc , and fill factor FF ) with time were in situ measured by using a solar cell I - V tester during the 1st LID (45°C, 1 sun, 12 h), regeneration (100°C, 1 sun, 24 h), and 2nd LID (45°C, 1 sun, 12 h). The results show that the LID and regeneration of the PERC solar cells are caused by the transition of B-O defects playing a dominant role together with the dissociation of Fe-B pairs playing a secondary role. The decay of η during the 1st LID is caused by the degradation of V oc , I sc , and FF , while the increase of η during the regeneration is mainly contributed by V oc and FF , and the decay of η during the 2nd LID is mainly induced by the degradation of I sc . After regeneration, the decay rate of η reduces from 4.43%–5.56% (relative) during the 1st LID to 0.33%–1.75% (relative) during the 2nd LID.

Исследование порошка титана, полученного методом СВС-гидрирования и дегидрирования в вакуумной печи

The method of SHS (self-propagating high-temperature synthesis) allows the efficient synthesis of titanium hydride. The article presents new results of experimental studies of titanium powders synthesized by the method of SHS hydrogenation and dehydrogenation in a vacuum furnace. Changes in the microstructure, phase and chemical composition during hydrogenation-dehydrogenation of a titanium sponge were studied. The titanium sponge was hydrogenated in a high-pressure SHS reactor at a hydrogen pressure of 3 MPa. The content of oxygen and carbon impurities decrease in the process of SHS hydrogenation was found. After hydrogenation, the sponge is a single-phase δ-hydride of titanium with a tetragonal lattice, the particles have a fragmentary shape. In the obtained titanium hydride, an increased hydrogen content of 4.64 wt. % was noted. The hydrogenated titanium sponge was mechanically crushed in a drum-ball mill to a particle size of 40 – 250 microns. Dehydrogenation of titanium hydride powder was carried out in a vacuum furnace at a temperature of 850 °C for 220 minutes. Titanium after dehydrogenation is a single-phase α-titanium powder with a hexagonal close packed lattice, the size and shape of the particles have not changed. The technological process under study provides the possibility of obtaining high-quality titanium powders of the necessary granulometric composition for various fields of powder metallurgy.