Abstract
Size upgrading is the main method to increase production capacity and reduce production costs during the directional solidification of silicon ingots. The distributions of oxygen and carbon impurities in G6 and G7 directional solidification furnaces are studied. The simulation results show that the distributions of oxygen and carbon impurities change significantly in the silicon ingot at different growth stages, especially the position of the highest concentration of carbon impurities has shifted. Compared with the G6 furnace, the average concentrations of oxygen and carbon in silicon crystal in the G7 furnace are reduced by 6.7%, and 7.3% respectively. With the growth of silicon crystal, the average concentration of oxygen gradually decreases, while the average concentration of carbon gradually increases.
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