A newly-developed phosphorus source, tertiarybutylphosphine (TBP), which is much less toxic than PH3, has been used to grow InP and GaAs1-xPx by atmospheric pressure organometallic vapor phase epitaxy (OMVPE). Excellent morphologies are obtained for the growth of InP between 560 and 630° C for TBP partial pressures larger than 0.5 x 10-3. For the first time, V/III ratios as low as 3 have been used to grow InP epilayers with featureless morphologies at 600° C. To obtain good morphologies at both lower and higher temperatures, higher TBP partial pressures are necessary. The electron mobility increases and the electron density decreases as the temperature is increased. The highest room temperature mobilities and lowest electron densities, obtained at 630° C, are 3800 cm2/V-sec and 3 x 1015 cm-3, respectively. The 10 K photoluminescence spectra of the InP epilayers at higher growth temperatures show no carbon contamination. Bound excition half widths as low as 3.0 meV have been measured. The use of TBP to replace PH3 in the growth of GaAs1-xPx results in a nearly linear relationship between vapor and solid composition at 610° C,i.e., the P distribution coefficient is nearly unity. This contrasts sharply with the very low P distribution coefficient obtained using PH3 at such low growth temperatures.