Abstract
Atmospheric pressure organometallic vapor-phase epitaxy was used to grow GaP doping superlattices. Measurements are reported for the first doping superlattice with a band gap which is indirect in both real space and k space. The first observations of phonon replicas in a n-i-p-i photoluminescence (PL) spectrum and a n-i-p-i-like PL peak coming from donor–acceptor transitions are also reported. Large energy shifts of 60 meV per decade of excitation intensity have been observed. The n-i-p-i peak intensities increased linearly with excitation intensity, and the bound exciton peak intensities increased superlinearly, at low illumination intensity, as expected for a periodically modulated space-charge potential. The distribution coefficients for Te and Zn in GaP were found, at 630 °C, to be 34 and 3.0×10−3, respectively.
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