Abstract
Undoped ZnSe epilayers have grown on (100) GaAs substrates by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) with dimethylzinc (DMZ) and hydrogen selenide (H 2Se) as source. The epilayers grown under 270–325°C exhibit low resistivity of about 1Ω·cm. The carrier concentration and mobility are of the order of 10 16cm -3 and 300–400 cm 2.v -1.s -1 respectively at RT. A strong NBE emission of PL and EL spectra are observed at 77K and RT respectively.
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