Abstract
InP with doping levels as low as 8 × 10 13 cm -3 and 300 K mobilities as high as 5744 cm 2/V · s has been grown without intentional doping, using trimethylindium (TMIn) and phosphine in an atmospheric pressure organometallic vapor phase epitaxy (OMVPE) reactor. TMIn source purity was found to have a major effect on the carrier concentration and mobility of undoped InP. The dominant residual acceptor was identified as Zn. Using appropriate doping, both n- and p-type carrier concentrations of up to 10 19 cm -3 have been obtained in the present study. n-Type InP layers have been grown using diethyltelluride and silane as dopants. Te has a very high incorporation efficiency with k Te = 36. Si has a low and temperature dependent distribution coefficient, due to the slow pyrolysis of silane at the growth temperature. The maximum photoluminescence (PL) intensity for Te doped InP occurs at n = 2 × 10 17 cm -3. Si doped InP was found to have poor PL efficiency. Using dimethylzinc as a p-type dopant, a low distribution coefficient, k Zn = 2.8 × 10 -3, was found at 600°C, apparently due to the high vapor pressure of Zn. The PL intensity of Zn doped InP with p >; 10 18 cm -3 is comparable to that of similarly doped n-type samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
