Abstract
Low pressure organometallic vapor phase epitaxy is used for the growth of Ga x In 1− x P lattice matched to GaAs and Al y Ga 1− y As buffer layers grown on GaAs substrates. Photoluminescence is used to determine lattice matched compositions. The group III gas phase composition required for lattice matching to Al 0.97Ga 0.03As is different than that for GaAs by 2–3%. Quantum well heterostructures of Al 0.97Ga 0.03As/Ga 0.5In 0.5P/Al 0.97Ga 0.03As as narrow as 30 Å exhibit photoluminescence. These materials are used to realize a GaAs/Al y Ga 1− y As graded index-separate confinement light emitting diode with a Ga 0.5In 0.5P active region. In addition, the GaAs/Ga 0.51In 0.49P interface shows electron accumulation suggesting a two-dimensional electron gas has formed at the interface. The growth, fabrication, and characterization of these device materials are discussed.
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