Effect Of Annealing Temperature Research Articles

Annealing temperature effects on BiFeO3 nanoparticles towards photodegradation of Eosin B dye

Annealing temperature effects on BiFeO3 nanoparticles towards photodegradation of Eosin B dye

Controlled growth of large-area monolayer graphene on Ni (110) facet: Insight from molecular dynamics simulation

To achieve the controlled synthesis of high-quality graphene/nickel heterostructure in practice, the study of the atomistic mechanism of graphene growth on the Ni (110) facet whose lattice mismatches with graphene is indispensable. A series of molecular dynamics simulations based on the modified interatomic force field were performed to provide an insightful understanding of the process of graphene growth by chemical vapor deposition. Herein, the dissolution and precipitation mechanism of graphene in the initial stage of growth on Ni (110) has been demonstrated, followed by the dynamic evolution of graphene growth was elucidated. The effects of carbon deposit rate and annealing temperature on graphene growth were investigated in-depth, and the optimum carbon deposit rate and temperature in theory for homogeneous monolayer graphene growth on Ni (110) facet were determined. Furthermore, two self-healing routes of defects of embedded C-chain and C-heptagon for high-temperature catalyzed were analyzed. Lastly, the relevance of the chemical vapor deposition technique was discussed in terms of the actual deposition process. The theoretical investigations and practical discussions can provide an instructive reference for optimizing chemical vapor deposition processing conditions in preparing homogeneous monolayer graphene on the Ni (110) facet.

P‐1.12: Vacuum Annealing Treatment on High‐Performance AlZnO Thin Film Transistors

We explore the effects of vacuum annealing temperature (100, 200, and 300 °C) on device performance of AlZnO thin film transistors (AZO TFTs). The AZO TFTs show excellent electrical properties at annealing temperature of 100 °C, including a saturation mobility of 12.2 cm2V−1s−1, a sub-threshold swing of 186 mV/decade, and an on/off ratio state current ratio over 108. Our findings promote practical application of the AZO TFTs to advanced displays.

Effects of hot rolling and annealing temperature on microstructure and tensile properties of a Zr-containing Ni-based ODS superalloy

A Ni-based ODS superalloy with composition of Ni-20Cr-0.5Ti-0.3Al-0.6Y2O3-0.6Zr (in mass%) was prepared by mechanical alloying and hot isostatic pressing. Hot rolling was carried out at 1100 °C with different reduction ratio (40 %, 50 % and 60 %) and different annealing temperature (1200 °C, 1250 °C and 1300 °C) to investigate their influence on nanoscale oxides, grain and high temperature tensile properties. The results showed that high-density nanoscale oxides Y4Zr3O12 are formed in the Zr-containing Ni-based ODS alloy. Hot rolling and annealing result in the slight increase of oxide size and decrease of oxide density. The growth rate of oxides obeys fifth-law, which is called pipe diffusion along dislocation. The diffusion activity energy is derived as 827 kJ/mol. Average oxide size decreases and number density increases by decreasing rolling reduction ratio or annealing temperature. The size of columnar grain and grain aspect ratio increase with increase of annealing temperature which results into enhanced ultimate tensile strength and improved ductility at 800 °C. In addition, increasing rolling reduction ratio refines grain size and reduces grain aspect ratio in the alloy. The strength of the alloy annealed at 1300 °C with a reduction ratio of 50 % is the highest which is approximately 300 MPa at 800 °C.

Effect of deposition pressure and annealing temperature on the microstructure and oxidation resistance of FeNbMoTaW films

Effect of deposition pressure and annealing temperature on the microstructure and oxidation resistance of FeNbMoTaW films

Annealing temperature effect on the performances of porous ZnO nanosheet-based self-powered UV photodetectors.

Porous ZnO nanosheets (ZnO NSs) may play an important role in self-powered UV photodetectors due to their excellent properties, and their porosity feature affects the photoresponse performance greatly. Porous ZnO NSs were prepared by the hydrothermal method followed with a one-step annealing treatment. The effects of the annealing temperature on the microstructure and photoresponse of porous ZnO NSs and n-ZnO NSs/p-PEDOT:PSS self-powered UV photodetectors were investigated. The results show that the pore density and size of ZnO NSs can be tuned by changing the annealing temperature. At an optimum annealing temperature of 450°C, ZnO NSs exhibit greater absorption capacity for the suitable pore density and size. Meanwhile, more crystal defects due to surface contractile properties increase the number of photogenerated carriers. On this basis, the n-ZnO NSs/p-PEDOT:PSS photodetector presents a larger photocurrent and fast photodetection speed without external bias voltage, indicating the self-powered performance. The higher light absorption and large number of electron-hole pairs resulting from dense pores and surface defects in porous ZnO NSs might account for the enhanced performances.

Effect of Annealing Temperature on the Growth of Helium Bubbles in Silicon

Porous silicon has broad application prospects in the fields of Optics and catalysis. Manufacturing helium bubbles in silicon is one of the effective methods to prepare porous silicon. However, the research on the optimal parameters of this preparation technology and the growth mechanism of helium bubbles in silicon is not deep enough. In this paper, the experimental method of Ic + A is adopted. Firstly, 200 keV He ions (5 × 1016 ions / cm2) was implanted into monocrystalline silicon at room temperature, subsequent the effects of different annealing temperatures on the growth of helium bubbles in silicon were studied. It is found that after annealing at 400 °C and below, there are only some fine structures of interstitial particles in monocrystalline silicon samples. At the annealing temperature of 500 °C ~ 800 °C, two sizes of helium bubble structures appear in the defect layer, and the diameter of helium bubble increases with the increase of annealing temperature.

Effect of Annealing Temperatures on Phase Stability, Mechanical Properties, and High-Temperature Steam Corrosion Resistance of (FeNi)67Cr15Mn10Al5Ti3 Alloy

The effect of different annealing temperatures on the phase stability and mechanical properties of (FeNi)67Cr15Mn10Al5Ti3 high-entropy alloys (HEAs) was studied. The phase stability was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and electron backscattering diffraction (EBSD). The mechanical properties of the alloy were characterized by hardness and tensile tests. Furthermore, the heat-resistant corrosion properties of the (FeNi)67Cr15Mn10Al5Ti3 alloy after annealing at 800 °C was tested under high-temperature steam. The results indicated that HEAs exposed to different annealing temperatures always exhibited the face-centered cubic (FCC) phase. With rising annealing temperature, the dendrite structure of the alloys in the as-cast condition gradually disappeared, with recrystallization and precipitation of larger grains. The tensile strength of the alloy first increased and then decreased with the rising annealing temperature, the hardness and yield strength of the alloy decreased slightly, and the tensile elongation varied greatly. These findings can be used as a basis for improving the phase stability and mechanical properties of a Cr-Fe-Ni-Mn-HEA system with unequal atomic ratios. The heat and corrosion resistance of the alloy at 360 °C and 400 °C was better than that of Zr-4 alloy.

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p+-GaN contacting layers

Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin (20–30 nm thick) p-InGaN/p+-GaN contacting layers. The effects of surface chemical treatment and annealing temperature were examined. The optimal annealing temperature was determined to be 550 °C, above which the sheet resistance of the samples degraded considerably, suggesting that undesirable alloying had occurred. Pd-containing metal showed ~35% lower compared to that of single Ni. Very thin (2–3.5 nm thick) p-InGaN contacting layers grown on 20–25 nm thick p+-GaN layers exhibited one to two orders of magnitude smaller values of compared to that of p+-GaN without p-InGaN. The current density dependence of , which is indicative of nonlinearity in current-voltage relation, was also examined. The lowest achieved through this study was 4.9 × 10–5 Ω·cm2 @ J = 3.4 kA/cm2.

Establishment and verification of resistance temperature coefficient model of P-type non-uniformly doped resistance

In this paper, a first-order average temperature coefficient of resistance () calculation model is established and analyzed based on the distribution of piezoresistive doping concentration in bulk silicon. Furthermore, by extracting the experimental results of the first-order of multiple research groups and combining the first-order calculation model, the new mobility model in the concentration range of piezoresistance (1 × 1018–1 × 1020 at cm−3) is obtained by fitting. The first-order of five implantation concentrations under the same process is tested. The results show that the error between the first-order obtained based on the new mobility calculation model and the test results is within 5%. However, the first-order based on the Arora mobility model has a deviation of 104.6% under the implantation condition of 3.75 × 1015 at cm−2. At the same time, the effects of different annealing temperatures and time on the first-order at the implantation concentration of 8.5 × 1013 at cm−2 are compared. The results show that a higher annealing temperature or longer annealing time is not conducive to reducing the first-order , but the difference is small.

Effect of Ni substitution and annealing temperature on structural and magnetic properties of MnZn-Ferrites: Cytotoxicity study of ZnO and SiO2 coated core shell structures

Magnetic spinel ferrite nanoparticles (NPs) have a broad scope of applications based on their structural properties, including in lithium-ion batteries, catalysts, electrochemical energy storage, drug delivery, magnetic hyperthermia, and photothermia. In this study, we investigated the structure, crystallographic phase formations, and magnetic properties of Ni-substituted MnZn ferrites (MZFs), Mn(0.6-x)Zn(0.4-y)Ni(x+y)Fe2O4 (x = 0–0.6, y = 0; y = 0–0.4, x = 0) compositions of as-prepared (AP) and air annealed (350–1200 °C) samples. All AP NPs exhibited a pure spinel structure. Ni-MZF compositions annealed at 600 °C had high α-Fe2O3 secondary phase content in Ni-MZFs (Ni substituted for Zn), whereas Ni-MZFs with x = 0.4 (Ni substituted for Mn) had no impurities, and its magnetization (50 emu/g) was enhanced compared with that of the other samples. X-ray photoelectron spectroscopy revealed that Fe3+ cations were present in tetrahedral and octahedral sites. The single spinel phase reappeared with improved crystallinity in all Ni-MZFs by annealing at 1200 °C and exhibited superior magnetization (60–73 emu/g) compared with that of MZF (35 emu/g). Additionally, the spinel phase was stabilized in the ZnO- and SiO2-coated Ni-MZF core shell structures annealed at 700 °C with higher magnetization than MZF. Moreover, Ni-MZF core shell structures exhibited biocompatibility and may have biomedical applications.

Mn-incorporated Co3O4 bifunctional electrocatalysts for zinc-air battery application: An experimental and DFT study

Manganese-incorporated Co3O4 catalysts were prepared via thermal pyrolysis of ZIF-67, and the effect of manganese incorporation and annealing temperature on their catalytic performances for oxygen reduction and evolution reactions (ORR, OER) were investigated. Notable crystalline distortion was induced by manganese insertion into Co3O4 lattice, resulting in smaller crystallite size, more abundant Co2+ and considerable oxygen vacancies. All these properties were regarded as the crucial origins for electrocatalytic activity elevation. The catalyst annealed at 450 °C (denoted as Mn/Co-450) exhibited the optimal catalytic activity with an ultra-low potential gap (0.83 V). Using Mn/Co-450 as an air cathode, the zinc-air battery delivered high power density (115.5 mW cm−2), competitive specific capacity (783.4 mAh g−1) and good cycling stability. The theoretical overpotentials of ORR and OER were respectively decreased by 0.18 V and 0.05 V by DFT calculation due to the weakened interaction between Co and OH group and the strengthened Co-OOH interaction.

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors

In this work, the effect of rapid thermal annealing (RTA) temperature on the ferroelectric polarization in zirconium-doped hafnium oxide (HZO) was studied. To maximize remnant polarization (2Pr), in-plane tensile stress was induced by tungsten electrodes under optimal RTA temperatures. We observed an increase in 2Pr with RTA temperature, likely due to an increased proportion of the polar ferroelectric phase in HZO. The HZO capacitors annealed at 400°C did not exhibit any ferroelectric behavior, whereas the HZO capacitors annealed at 800°C became highly leaky and shorted for voltages above 1 V. On the other hand, annealing at 700 °C produced HZO capacitors with a record-high 2Pr of ∼ 64 μC cm−2 at a relatively high frequency of 111 kHz. These ferroelectric capacitors have also demonstrated impressive endurance and retention characteristics, which will greatly benefit neuromorphic computing applications.

Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO2 thin film

An investigation was conducted with regard to the effect of etching process on the ferroelectric (FE) characteristics of different device structures with Al-doped HfO2 thin films; further, the effect of the rapid thermal annealing temperature on the FE properties was elucidated using metal-ferroelectric-metal (MFM) capacitors using TiN electrodes with varying thickness and 4 at.% Al-doped HfO2 FE layer. The capacitors were annealed at different temperatures after lithography and etching process; this was aimed at incorporating the FE-orthorhombic phase. The samples annealed after patterning were able to obtain improved FE characteristics due to the amount of tensile stress. The MFM devices that were initially patterned were also studied as a reference. We found that even though it required higher temperature and shorter time to introduce the FE phase, it exhibited more stable as well as promising FE properties and electrical performances with a relatively large remnant polarization (2P r ∼ 60 μC cm−2), a coercive electric field of approximately 2 MV cm−1 and high switching current density with less leakage. Our results indicate how the FE properties of the HfO2-based thin films can be engineered through suitable process sequence and post-annealing conditions, thereby verifying the applicable flexibility of FE-HfO2 for semiconductor device integration.

Effects of heat treatment and compaction pressure on the microstructure and magnetic properties of core-shell structured FeSiBNbCu/SiO2 soft magnetic composites

Here, the FeSiBNbCu/SiO2 soft magnetic composites (SMCs) with core-shell structure were successfully designed and fabricated using nanocrystalline powders as seeds and SiO2 were grown by sol-gel technique onto the surface of the seed particles. We systematically investigated the influences of annealing temperature and compaction pressure on the micromorphology, chemical structure and soft magnetic properties of the SMCs. The results demonstrate that a large number of submicron-sized SiO2 particles are uniformly deposited on the surface of the powders, which significantly improves the insulating characteristics between the magnetic powders. Also, the effective permeability μe increases and the core loss Pcv decreases with increasing annealing temperature from 480 °C to 550 °C, which is attributed to the relaxation of internal stress and the increase of volume fraction of α-Fe(Si) grains. Furthermore, an increase in compaction pressure effectively increases the densification and reduces the porosity, which facilitates a denser microstructure. Under the combined effect of optimal annealing temperature and compaction pressure, the SMCs exhibit high μe of 84 and low Pcv of 174 kW/m3 at 50 kHz for Bm = 0.1 T. This work provides a new strategy for the construction of core-shell structure and a comprehensive understanding of the relationship between process parameters and microstructure, which is of great guiding significance for industrial production.

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors.

A high-performance ZnSnO (ZTO) thin-film transistor (TFT) was fabricated, with ZTO deposited by rf magnetron sputtering. XPS was used to analyze and study the effects of different annealing temperatures on the element composition and valence state of ZTO films. Then, the influence mechanism of annealing treatment on the electrical properties of ZTO thin films was analyzed. The results show that, with an increase in annealing temperature, the amount of metal bonding with oxygen increases first and then decreases, while the oxygen vacancy decreases first and then increases. Further analysis on the ratio of Sn2+ is presented. Electrical results show that the TFT annealed at 600 °C exhibits the best performance. It exhibits high saturation mobilities (μSAT) up to 12.64 cm2V−1s−1, a threshold voltage (VTH) of −6.61 V, a large on/off current ratio (Ion/Ioff) of 1.87 × 109, and an excellent subthreshold swing (SS) of 0.79 V/Decade.

Enhancing the sensing behavior of a reduced graphene magnetite-based plasmonic optical fiber sensor.

The D-shaped optical fiber is a base for the magnetite-based graphene nanocomposite (rGO/Fe3O4) for a Pb heavy metal sensing layer. The designed sensor was studied under the effects of rapid annealing, water circulation, and plasmonic tuning. Various annealing temperatures (100°C, 200°C, 300°C, and 400°C) were investigated. The effect of rapid thermal annealing (RTA) temperature on the transmission results were found at a short wavelength of 300 nm and a minimum point of ∼380nm. The bandgap energy was verified between 2.3 and 3.17 eV for 100°C and 400°C, respectively. The sensor results show modification toward a short wavelength by increasing the rapid annealing temperature. Compared with furnace methods, the transmittance shift of the plasmonic effect showed the best performance under the influence of RTA. RTA at 300°C and 400°C offered an acceptable degree of stability at the beginning (1-50 min). The best performance of the proposed sensor was improved by introducing a circulating liquid chamber into the initial design. The resonance shifts due to Pb ion concentration (5, 10, and 15 ppm) were studied for transmission and wavelength shifts. The sensor shift was enhanced by using a free space polarizer controller attached to the second design. The results give detection and sensing potential in the visible range at a possible remarkable response time. The figure of merit was 62.5 a.u., and the maximum sensitivity was 1 a.u./ppm by using a polarizer controller. This article presents the optical characterizations of plasmonic sensor-based rGO/Fe3O4 for detecting Pb ions and enhancing the resonance shift. RTA for composite material and water circulation associated with D-shaped optical fiber enhances response time and stability designed using a polarizer controller.

Effect of Heating Procedure and Annealing Temperature on Transmission Spectra of sp1-Carbon Films Synthesized by the Ion-Plasma Method

Effect of Heating Procedure and Annealing Temperature on Transmission Spectra of sp1-Carbon Films Synthesized by the Ion-Plasma Method

Retraction: Zhu et al. The Effect of Vacuum Annealing Temperature on the Properties of AlCrTiSiN Coating Prepared by Arc Ion Plating. Coatings 2022, 12, 316

The author and journal retract the article (The Effect of Vacuum Annealing Temperature on the Properties of AlCrTiSiN Coating Prepared by Arc Ion Plating) [...]

Effect of different matrix structure in medium-Mn quenching and partitioning steel on austenite stability and work hardening behavior

The "one-step" quenching and partitioning (Q&P) process combined with the annealing process is applied to medium-Mn steel. The effects of different annealing temperatures on the microstructure, C-element diffusion and mechanical properties of the experimental steels were systematically studied. When the annealing temperature varies from 810 °C to 600 °C, the martensite-austenite island of the test steel gradually decreased or disappeared, the polygonal blocky ferrite increased, and the large lath-like retained austenite became flake-like (film-like). Meanwhile, C that martensite provides can be taken full advantage by retained austenite due to the relatively small amount of martensite in the test steel, and the sustained transformation induced plasticity (TRIP) effect could be achieved by such retained austenite, resulting in a good mechanical property. However, the test steels treated at too high annealing temperatures (≥700 ℃) are difficult to occur TRIP effect because of the over C enrichment in retained austenite in the steel. In summary, excellent comprehensive mechanical properties were obtained for the test steel annealed at 670 °C with "one-step" Q&P process, with an ultimate tensile strength of 1130 MPa and total elongation of 26.80%.