Establishment and verification of resistance temperature coefficient model of P-type non-uniformly doped resistance

Abstract

In this paper, a first-order average temperature coefficient of resistance () calculation model is established and analyzed based on the distribution of piezoresistive doping concentration in bulk silicon. Furthermore, by extracting the experimental results of the first-order of multiple research groups and combining the first-order calculation model, the new mobility model in the concentration range of piezoresistance (1 × 1018–1 × 1020 at cm−3) is obtained by fitting. The first-order of five implantation concentrations under the same process is tested. The results show that the error between the first-order obtained based on the new mobility calculation model and the test results is within 5%. However, the first-order based on the Arora mobility model has a deviation of 104.6% under the implantation condition of 3.75 × 1015 at cm−2. At the same time, the effects of different annealing temperatures and time on the first-order at the implantation concentration of 8.5 × 1013 at cm−2 are compared. The results show that a higher annealing temperature or longer annealing time is not conducive to reducing the first-order , but the difference is small.