Formation mechanisms of Cu(In,Ga)Se2 solar cells prepared from electrodeposited precursors

Abstract

The development of low cost industrial processes is one of the key issues to make Cu(In,Ga)Se2 based solar cells reach grid-parity. Such a process is found by using a two-step technology based on the sequential electro-deposition of a metallic precursor followed by a rapid annealing. Three types of metallic precursors (two-compound systems as copper–indium, copper–gallium and three-compound system as copper–indium–gallium) have been electrodeposited on a molybdenum sputtered soda lime glass and alloyed through a low annealing temperature. Then a selenium film has been evaporated and the stack has been annealed at high temperature in a rapid thermal processing furnace. A one-step heating profile has been used from room temperature to 550°C in less than 1min. Samples for which the heating was stopped after different annealing times have been characterized using several techniques: X-ray fluorescence spectrometry for elemental composition, X-ray diffraction and Raman spectroscopy for phase composition, scanning electron microscopy for structural analysis and glow discharge optical emission spectroscopy for diffusion study. Preferential formation reactions of the two-compound based metallic precursors have been studied and compared with the copper–indium–gallium metallic precursor used in a two step process. A gallium free system reacts faster than a gallium-based system and presents well-formed ternary compound after a standard selenization. However, the incorporation of gallium can be improved through a longer annealing time or a higher annealing temperature.