Abstract
We explore the effects of vacuum annealing temperature (100, 200, and 300 °C) on device performance of AlZnO thin film transistors (AZO TFTs). The AZO TFTs show excellent electrical properties at annealing temperature of 100 °C, including a saturation mobility of 12.2 cm2V−1s−1, a sub-threshold swing of 186 mV/decade, and an on/off ratio state current ratio over 108. Our findings promote practical application of the AZO TFTs to advanced displays.
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