Abstract
Mg-doped ZnO nanoparticle (NP) thin-film transistors (TFTs) were fabricated using a solution process under a range of Mg content and annealing temperature conditions. The effects of Mg doping and annealing on the electrical properties of the Mg-doped TFTs were investigated. The experimental results demonstrate that critical Mg doping and thermal annealing improve the electrical characteristics of the TFTs. It can mainly be attributed to the suppression of oxygen vacancy formation verified from X-ray photoelectron spectroscopy (XPS) analyses and Hall measurements.
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