Abstract
A low production cost and non-toxic metal-oxide semiconductor, Al-doped zinc oxide (AZO), are used as a channel layer to fabricate AZO thin-film transistor. The effect of sputtering power density and post annealing temperature on the performance of AZO TFTs are respectively investigated. The AZO TFTs sputtered at 5.92 W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and annealed at 200 °C show good device performance while the AZO TFTs sputtered at 4.44 W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and annealed at 180 °C exhibit the good positive bias stress reliability.
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