Abstract
Porous silicon has broad application prospects in the fields of Optics and catalysis. Manufacturing helium bubbles in silicon is one of the effective methods to prepare porous silicon. However, the research on the optimal parameters of this preparation technology and the growth mechanism of helium bubbles in silicon is not deep enough. In this paper, the experimental method of Ic + A is adopted. Firstly, 200 keV He ions (5 × 1016 ions / cm2) was implanted into monocrystalline silicon at room temperature, subsequent the effects of different annealing temperatures on the growth of helium bubbles in silicon were studied. It is found that after annealing at 400 °C and below, there are only some fine structures of interstitial particles in monocrystalline silicon samples. At the annealing temperature of 500 °C ~ 800 °C, two sizes of helium bubble structures appear in the defect layer, and the diameter of helium bubble increases with the increase of annealing temperature.
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