Abstract
The strain-compensations for both the interfacial strain and the average strain of whole multiple quantum well (MQW) stacks are investigated in InGaAs/InAIP MQW structures grown by gas source molecular beam epitaxy. The interfacial strain is canceled by the combination of different interfacial bonds (InAs-like monotype bonds and InGaP-like monotype bonds) at the quantum well (QW) top and bottom interfaces. Furthermore, the strain-compensations for both the interfacial and the average strains produces few misfit dislocations and provides excellent thermal stability for highly-strained MQW stacks.
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