Abstract
Crystalline quality is investigated for highly compressive strained multiple quantum well (MQW) structures, with and without strain compensation. Strain compensation is created by tensile strain in the barrier layers of the InGaAs/InAlP system grown by gas-source molecular beam epitaxy on InP substrates. Detailed invesligations on the effects of strain compensation on the structural properties, optical properties and thermal stability for strained MQWs show that strain compensation produces high-quality strained MQW with very few misfit dislocations and excellent thermal stability. Strained MQWs without strain compensation have many misfit dislocations which are enhanced by thermal annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Japanese Journal of Applied Physics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
