Abstract
The surface Fermi level pinning which has been usually observed on conventionally treated surfaces of InP is remarkably released by phosphine (PH3) plasma treatment. This is confirmed experimentally by Kelvin probe measurement and by the appearance of significant metal work function dependence of the Schottky barrier height. In the case of Au/n–InP Schottky junctions, the true barrier height of 0.59 eV is achieved after PH3 plasma treatment. Phosphorus oxide film formed by oxidation of the PH3–plasma treated surface is useful in constructing tunneling metal-insulator-semiconductor structure. The effective barrier height is estimated to be 0.68 eV for Au/n–InP tunneling MIS Schottky diodes.
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