Abstract
We have studied the structural and electrical characteristics of ion implanted epitaxial ReSi2 films grown on n - Si (100) substrate. Ion implantation causes amorphous clusters in the film, which overlap and grow to be an amorphous layer upon further implantation. The resistivities of the implanted ReSi2 films are decreased with increasing the degree of disorder (implantation dose), regardless of the kinds of chemical species of the implanted ions. The 28Si-implanted amorphous ReSi2 films recover the original epitaxy upon thermal annealing at 700°C for 30 min in vacuum, so do the partly amorphized ReSi2 films by 40Ar implantation. On the other hand fully amorphized ReSi2 by 40Ar implantation (dose ≥ 1×1014 /cm2) does not recover upon thermal annealing even at 1000°C for 30 min. The resistivities of the annealed samples recovered by the same amount proportional to the degree of the epitaxy.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
