Abstract
Nanometer-resolved spatial variations in the Schottky barrier height (SBH) formed at a chemically prepared Au/n-GaAs interface and a UHV prepared Au/PtSi/Si interface have been compared using ballistic electron emission microscopy (BEEM). The statistical distribution of the SBH's obtained were also compared to current-voltage (I/V) and capacitance-voltage (C/V) characteristics of each metal/semiconductor contact. BEEM detects a nanoscale variation in SBH but with a more uniform SBH distribution for the in-situ annealed PtSi/Si diodes versus the oxide passivated Au/GaAs diodes. The average SBH from BEEM agreed well with the SBH from I/V and C/V measurements for both diodes if the effects of thermionic field emission and image force lowering, respectively, were considered. These results demonstrate the unique application of BEEM for the nanoscale evaluation of semiconductor interface inhomogeneities critical to the control of macroscopic electronic properties.
Published Version
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