Abstract
The Schottky barrier height of phosphidized InGaAs by using phosphine plasma has been studied. True barrier height estimated from the Richardson plot is found to be significantly dependent on the metal work function. Phosphidization forms a thin phosphorus layer in addition to substitution of phosphorus for arsenic sites, resulting in formation of a metal-insulator-semiconductor (MIS) Schottky junction. An effective barrier height as high as 0.7 eV was attained for a Au/InGaAs MIS Schottky junction as measured from the room temperature current-voltage characteristic, while the true barrier height of 0.55 eV, which is close to the Schottky limit, is estimated from the Richardson plot. >
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