Abstract
GaN x P 1−x / GaP multiple quantum wells (MQWs) with various N concentrations and well thicknesses were grown on (100) GaP substrates by gas source molecular beam epitaxy with a radio frequency nitrogen radical beam source. The N concentration and GaNP well thickness were determined by high-resolution x-ray rocking curve measurements and theoretical dynamical simulations. Photoluminescence (PL) measurements show that the PL wavelength of GaNP redshifts and the band edge emission integrated intensity increases with increasing N concentration, up to 2.5%. By using an infinite barrier model and various well thicknesses of GaN0.025P0.975/GaP MQWs, a large conduction-band effective mass mc*∼0.9 me is obtained for the GaN0.025P0.975 alloy, indicating a mixing of Γ and X wave functions in the conduction band.
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