Abstract
GaInNAs/GaAs multiple quantum wells (MQWs) with different N composition were successfully grown on semi-insulating GaAs substrate by gas-source molecular beam epitaxy. A nitrogen radical beam source was used to incorporate N into GaInAs layers. High resolution x-ray rocking curves measurements indicate that the N composition in GaInNAs layer was increased from 0.009 to 0.03 with increasing N2 flow rate. Photoluminescence (PL) measurements show that the PL wavelength red shifts with increasing N composition in GaInNAs layer. For a 7-period Ga0.7In0.3N0.02As0.98/GaAs MQW, a PL peak at 1.3 μm wavelength at room temperature has been successfully obtained. The band offset ΔEc for Ga0.7In0.3NxAs1−x/GaAs enlarges quickly from 0.26 eV to 0.56 eV with increasing N concentration from 0% to 3%.
Published Version
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