III–V heterostructure tunnel field-effect transistor operation at different temperature regimes

Abstract

Tunnel field-effect transistors (TFETs) are a potential alternative to MOSFETs for low-temperature electronics. We provide an in-depth experimental characterization of TFETs analyzing the fundamental physical behavior at different temperature regimes. TFET characteristics from 13 to 300 K both in forward and reverse bias are discussed by employing a variation in InAs/InGaAsSb/GaSb heterojunction vertical nanowire devices. Evaluation of the TFET Negative Differential Resistance (NDR) characteristics at different temperatures is established as a technique to probe the dopant incorporation. It is observed that the temperature dependence of the Fermi degeneracy and Fermi-Dirac distribution largely influences the transistor performance at each operating temperature. Our investigation reveals that the TFETs demonstrate lower subthreshold swing than the physical limit of MOSFETs above 125 K. For low-temperature applications, the devices can be operated down to a low operating bias of 0.1 V, while for high temperature, a larger bias of 0.3 V is preferred.