Abstract
Diodes with GaAsNSb/GaAs multiple quantum wells (MQWs) were grown on p-GaAs(0 0 1) substrates by metalorganic molecular-beam epitaxy. Negative differential resistance (NDR) characteristics were clearly observed at room temperature. The peak-to-valley current ratio was as high as 6 and the peak current density was ∼1.7 A/ cm 2 . The NDR characteristics were also observed for a GaAsNSe/GaAs MQW diode and a GaAsNSe-based tunnel junction diode. The mechanism of the observed NDR is discussed considering the band offsets in the nitrogen-related GaAsNSb/GaAs and GaAsNSe/GaAs MQWs.
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