Abstract
Diodes with GaAsNSb/GaAs multiple quantum wells (MQWs) were grown on p-GaAs(0 0 1) substrates by metalorganic molecular-beam epitaxy. Negative differential resistance (NDR) characteristics were clearly observed at room temperature. The peak-to-valley current ratio was as high as 6 and the peak current density was ∼1.7 A/ cm 2 . The NDR characteristics were also observed for a GaAsNSe/GaAs MQW diode and a GaAsNSe-based tunnel junction diode. The mechanism of the observed NDR is discussed considering the band offsets in the nitrogen-related GaAsNSb/GaAs and GaAsNSe/GaAs MQWs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
