Abstract
Planar-type surface tunnel transistors (STTs), that are adequate for device miniaturization and high-level integration, are demonstrated for the first time. Two planar-type STTs based on GaAs and In 0.2Ga 0.8As systems were fabricated using MBE regrowth techniques. Both devices exhibited clear gate-controlled negative differential resistance (NDR) characteristics due to interband tunneling, and their basic operation was confirmed. The maximum peak current density and peak-to-valley current ratio (PVR) in NDR characteristics are, respectively, 177 A cm −2 and 3.4 for the GaAs-STT and 2100 A cm −2 and 2.9 for the InGaAs-STT. The InGaAs-STT enhances the operation current by a factor of more than 10 compared to the GaAs-STT. Further enhancement is obtained by increasing the In content of the InGaAs layer. The In content dependence on the tunneling current of InGaAs tunneling diodes suggests that a current density of more than 1 × 10 4 A cm −2will be achieved by an InGaAs-STT with In content higher than 0.5.
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