Abstract
This study focuses on the impact of high-doping impurities (>1018 cm−3) on the morphology of homoepitaxially grown (100) 4° off β-Ga2O3 film, as well as incorporating insights from the Cabrera–Vermilyea model (C–V model). Using atomic force microscopy imaging, we reveal that under low-supersaturation conditions, dopant-induced impurities lead to irregular step formation and growth stalling, inducing the step-bunching formation consistent with C–V model predictions. Conversely, higher supersaturation conditions restore desired step-flow morphology, resembling low-impurity growth states. It is also shown that the step-bunching formed under lower supersaturation conditions and high-impurity concentration might induce unwanted structural defects and compensate the free carriers. These findings underscore the delicate interplay between dopant concentrations, growth morphology, and supersaturation in metalorganic vapor phase epitaxy-grown (100) β-Ga2O3 films, providing a comprehensive understanding of optimizing their electrical properties with respect to power electronics applications.
Published Version
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