High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors

Abstract

This work presents the high-temperature DC and RF behaviors of partially-depleted SOI MOSFETs. DC and RF figures of merit are deeply investigated, both analytically and experimentally, to provide a complete study of high-temperature performance and a comparison between floating-body and body-tied transistors. A highly stable RF performance is noticed especially for cutoff frequency and intrinsic elements for temperature as high as 250 ° C .