High Temperature DC and RF Behavior of Partially Depleted SOI versus Deep n-Well Protected Bulk MOSFETs

Abstract

The introduction of deep n-well protection for bulk MOS transistors can highly enhance their DC and RF performance. It also gives the advantage of having floating-body and body-tied structures in bulk MOSFETs while eliminating the disadvantages related to the shift in performance between these two structures. We demonstrate that the high temperature, DC and RF performance of n-well isolated bulk MOSFETs are really competitive compared to the state-of-the-art Partially Depleted SOI MOS technology.