Abstract
AbstractCuCl reacts with Na[HB(R3R5pz)3] and phosphine (PR3) or isonitrile (CNR) to yield volatile (pyrazolylborate)copper(I) complexes. These compounds were evaluated as MOCVD precursors. Using [{HB(pz)3}Cu(PEt3)] and [{HB(pz)3}Cu(PMe3)], thin copper films were grown by thermal metal organic chemical vapor deposition in a low pressure reactor in the temperature range 150–350°C. Polycrystalline Cu‐phases were obtained at temperatures as low as 150°C. The metallic films were characterized by four‐point‐probe resistivity measurements, AES, and XPS, as well as AFM and SEM. Selective deposition on metal‐seeded surface sites was observed on Pt, Au, Al, and W versus SiO2. Anti‐selective deposition was found to occur on Pd‐seeded samples.
Published Version
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