Abstract
We discuss fabrication of GaAs quantum wires and quantum dots using an in situ MOCVD selective growth technique on SiO 2 patterned substrates, including the optical properties of those nano-structures. As for the GaAs quantum wires, triangular-shaped GaAs quantum wires with a lateral width less than 10 nm were obtained. The photoluminescence (PL) and magneto-PL measurements clearly demonstrate the existence of the quantum wire effects in the structures. In addition, InGaAs strained quantum wires were also fabricated. Using a similar but slightly different selective growth technique, GaAs dots with a dimension of 25 × 25 × 12 nm surrounded by AlGaAs regions were prepared.
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