Abstract
We discuss fabrication of GaAs quantum wires and dots using both selective growth and spontaneous growth technique in MOCVD, including the optical properties of those nano-structures. In the selective growth, triangular-shaped GaAs quantum wires as narrow as 7nm and quantum dots with 25nm lateral width were obtained. The quantum confinement effect is evidenced by photoluminescence (PL) and magneto-PL. On the other hand, self-organizing growth achieved InGaAs quantum dots with a diameter of 15nm. For characterization of the nanostructures, observation of photoluminescence from a single quantum dot was achieved. Finally, as the first step to the ultimate quantum lasers, a vertical microcavity quantum wire lasers was demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
