Abstract
The authors discuss fabrication of GaAs quantum wires and quantum dots using an in situ MOCVD selective growth technique on SiO2 patterned substrates, as well as the optical properties of those microstructures. Triangular-shaped GaAs quantum wires with a lateral width of 15 nm were obtained. The photoluminescence (PL) and magneto-PL measurements clearly demonstrate the existence of quantum wire effects in the structures. In addition, measures of time-resolved spectra indicate a longer carrier lifetime of excitons in the quantum wires compared with that in the quantum wells. Using a similar but slightly different selective growth technique, GaAs dots with a dimension of 25 nm*25 nm*12 nm surrounded by AlGaAs regions were prepared.
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