Pb(Zr x Ti 1 − x )O 3 ( x = 0.35, 0.40, 0.60, 0.65) thin films were prepared by sol–gel spin on technique. From the X-ray diffraction analysis, PZT films with Zr-rich compositions ( x = 0.60 and 0.65) had (111) preferential orientation and the preferential orientation changed to (100) for Ti-rich compositions ( x = 0.35 and 0.40). The dielectric measurements on the above compositions at room temperature showed that the dielectric constant values were higher in Zr-rich compositions compared to Ti-rich compositions. The ferroelectric behavior measured in terms of the remnant polarization (P r) and coercive field (E c) up to an applied field of 260 kV/cm depicted that the Zr-rich PZT films with (111) preferential orientation had higher P r and lower E c values compared to the Ti-rich PZT films with (100) preferential orientation can be understood from the domain switching mechanism.