Abstract
(PZT) thin films have been prepared on and substrates, respectively. On substrates, Ti-rich PZT thin films had lower perovskite transformation temperatures than those of Zr-rich PZT films. Therefore, was used as the seeding layer on to form a substrate. The threshold voltage shift of a capacitor reaches 9 V with ±10 V writing voltages, which is much larger than the 2 V of the capacitor. Different memory mechanisms in the capacitance-voltage characteristics of capacitors were further examined and discussed in this paper. © 2003 The Electrochemical Society. All rights reserved.
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