Abstract
Perovskite Pb(Zr,Ti)O 3 (PZT) thin films were successfully obtained at 395°C by metalorganic chemical vapor deposition (MOCVD) using seeds. In our MOCVD, prior to the growth of PZT films, PbTiO 3 or PZT was deposited as a seed. PZT thin films with seeds showed better crystalline structure and ferroelectric properties than those PZT films without seeds. Seeded PZT films showed 2Pr of 8.7∼17.3 w C/cm 2 and 2Ec of 70∼180kV/cm. Seed effect on the ferroelectric properties of Ti rich PZT films was larger than that of Zr rich PZT films.
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