Abstract
Pb(ZrxTi1−x)O3 (PZT) ferroelectric thin films were prepared by metalorganic chemical vapor deposition (MOCVD) on Pt/Ti/SiO2/Si substrate. Very thin PZT films, which were deposited at a lower temperature and post-annealed at higher temperature for crystallization, were used as a seed layer. PZT films grown on the seed layer exhibited superior characteristics in the crystalline structure and electrical properties, compared to those deposited without seed layer. Depending on the deposition conditions of PZT seed layer, a wide variation of surface morphology and stoichiometry was found between samples, whereas chemical composition was found to be very similar.
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