Abstract
Highly (100)-oriented Zr-rich PZT 80/20 and PZT 85/15 films and randomly oriented PZT 70/30 films were successfully prepared on (111) Pt coated Si substrates by a sol-gel process followed by rapid thermal annealing at 700 °C for 200 s. The dielectric properties of the films were measured. The (100)-oriented PZT 85/15 film has higher 2Pr (41.4 μC/cm2) and 2Ec (111 kV/cm) than the random oriented PZT 70/30 film.
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