vdW Heterostructures Research Articles

Revealing Bipolar Photoresponse in Multiheterostructured WTe2-GaTe/ReSe2-WTe2 P-N Diode by Hybrid 2D Contact Engineering.

The van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated with regard to practical applications. Recent studies on 2D materials have reignited attraction in the p-n junction, with promising potential for applications in both electronics and optoelectronics. 2D materials provide exceptional band structural diversity in p-n junction devices, which is rare in regular bulk semiconductors. In this article, we demonstrate a p-n diode based on multiheterostructure configuration, WTe2-GaTe-ReSe2-WTe2, where WTe2 acts as heterocontact with GaTe/ReSe2 junction. Our devices with heterocontacts of WTe2 showed excellent performance in electronic and optoelectronic characteristics as compared to contacts with basic metal electrodes. However, the highest rectification ratio was achieved up to ∼2.09 × 106 with the lowest ideality factor of ∼1.23. Moreover, the maximum change in photocurrent (Iph) is measured around 312 nA at Vds = 0.5 V. The device showed a high responsivity (R) of 4.7 × 104 m·AW-1, maximum external quantum efficiency (EQE) of 2.49 × 104 (%), and detectivity (D*) of 2.1 × 1011 Jones at wavelength λ = 220 nm. Further, we revealed the bipolar photoresponse mechanisms in WTe2-GaTe-ReSe2-WTe2 devices due to band alignment at the interface, which can be modified by applying different gate voltages. Hence, our promising results render heterocontact engineering of the GaTe-ReSe2 heterostructured diode as an excellent candidate for next-generation optoelectronic logic and neuromorphic computing.

Susceptible Detection of Organic Molecules Based on C3B/Graphene and C3N/Graphene van der Waals Heterojunction Gas Sensors.

Constructing van der Waals (vdW) heterostructures is a prospective approach that is essential for developing a new generation of functional two-dimensional (2D) materials and designing new conceptual nanodevices. Using density-functional theory combined with a nonequilibrium Green's function approach allows for the theoretical and systematic exploration of the electronic structure, transport properties, and sensitivity of organic small molecules adsorbed on 2D C3B/graphene (Gra) and C3N/Gra vdW heterojunctions. Calculations show the metallic properties of C3B/Gra and C3N/Gra after the formation of heterojunctions. Interestingly, the heterojunctions C3B/Gra (C3N/Gra) for the adsorption of small organic molecules (C2H2, C2H4, CH3OH, CH4, and HCHO) at the C3B (C3N) side are sensitive to the chemisorption of C2H2 and C2H4. Similarly, the Gra/C3B is chemisorbed for both C2H2 and C2H4 when adsorbed on Gra side, while it is only chemisorbed for C2H2 in Gra/C3N. Interestingly, all heterojunctions on different sides are physisorbed for CH3OH, CH4, and HCHO. Furthermore, the calculated I-V curves demonstrate that the devices based on the adsorption of C2H2 and C2H4 at each side of the heterojunction have remarkable anisotropy, in with the current being considerably greater in the zigzag direction than in the armchair direction. More specifically, with C2H2 adsorbed on the Gra side, the sensitivity along the armchair direction is up to 85.0% for Gra/C3B and close to 100% for Gra/C3N. This study reveals that C3B/Gra (C3N/Gra) heterojunctions with high selectivity, high anisotropy, and excellent sensitivity are highly prospective 2D materials for applications, which further contributes new insights into the development of future electronic nanodevices.

Tunability in electronic and optical properties of GaS/PbS vdW heterostructure

A promising novel class of heterostructures has recently emerged, combining a semiconducting GaS monolayer with other 2D materials for energy-related applications. In this study, we considered the layered PbS to form the van der Waals heterostructure with GaS and investigated its properties using density functional theory. The GaS/PbS heterostructure exhibits a type-II heterostructure with an indirect bandgap of 1.65 eV, displaying enhanced light absorption across the visible spectrum. Moreover, the heterostructure's energy band gap shows tunability with an applied transverse electric field attributed to the spontaneous electric polarization within the lattice. Subsequently, it contributes to increased optical absorbance and light harvesting efficiency under ±0.2 V/Å electric field. The applied electric field also offers tunable band alignments (transition type-II and type-I), making it a potential candidate for solar cells that can optimize their efficiency based on varying light conditions.

Moiré-pattern-tuned interlayer friction of two-dimensional α- and β-tellurene via first-principles calculations and experimental validation

Tellurene, as an emerging class of two-dimensional (2D) materials, exhibit distinctive physicochemical properties derived from their varied structural morphologies, particularly in van der Waals (vdW) heterostructures formed between their allotropes, demonstrating substantial potential for superlubricity applications. This study employs a synergistic approach that combines theoretical calculations with experimental investigations to investigate the tribological performance of two tellurene allotropes (α- and β-Te) and their allotropic homojunctions (α-Te/β-Te). The frictional forces of the tellurene systems under varying twist angles were predicted by applying potential energy surfaces (PESs) to the Prandtl–Tomlinson (PT) model. These findings indicate that a reduction in energy barriers leads to decreased frictional forces, thereby enhancing the system's superlubricity. Notably, the frictional response is influenced not only by the interlayer sliding barriers but also by the shape and periodicity of the potential energy landscapes. Furthermore, leveraging the concept of the lubricating figure of merit, this study provides an in-depth analysis of the intrinsic frictional characteristics within a tellurene system. Experimentally, few-layer α- and β-Te tellurene were successfully synthesized, and their interlayer frictional properties were measured, showing high congruence with theoretical predictions. The outcomes reveal the exceptional interlayer frictional performance of tellurene under controlled twist angles, with the β-Te phase exhibiting superior lubricity over α-Te and the formation of an allotropic homojunction (α-Te/β-Te) further enhancing the interlayer superlubricity. These results not only deepen our understanding of the tribological performance of tellurene but also offer a new perspective on the frictional behavior of 2D materials.

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

2D heterostructures in photocatalysis for emerging applications: Current Status, challenges, and Prospectives

Photocatalysts for energy conversion and production, pollutants degradation, CO2 reduction, organic synthesis, biomedical, are especially important in a renewable energy-based energy and economic landscape. Due to their larger surface area and efficient capacity to segregate photogenerated electrons and holes, 2D van der Waals (vdW) heterostructures are being investigated to overcome the critical challenge of the short lifespan of photogenerated charges. This study presents the most recent research on 2D photocatalysts, specifically vdW heterostructures, for energy conversion and production, pollutants degradation, CO2 reduction, organic synthesis, biomedical. After presenting the core concepts of the light-driven redox reaction for aforementioned applications, we address a number of interesting 2D vdW heterostructures, highlighting transition metal dichalcogenides and graphene oxide heterostructures from both theoretical and experimental perspectives. In this review, we address the prospects and difficulties within this field of study. The enhanced understanding of 2D vdW heterostructures in photocatalysis presented in this research opens up new possibilities for increasing the efficiency of hydrogen generation. The key issues and future developments in the applications of 2D/2D layered heterojunctions and heterostructures in photocatalysis are explored.

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructures.

Exploring multiferroic materials that combine magnetic and ferroelectric properties is scientifically interesting and has important technical implications for many functions of nanoscale devices. In this work, spintronics and magnetoelectric coupling devices are proposed in two-dimensional (2D) layered ferromagnetic (FM)/ferroelectric (FE) van de Waals (vdW) heterostructures, VSeTe/Sc2CO2, employing density functional theory (DFT) calculations. The results indicate that the VSeTe/Sc2CO2 vdW heterostructure changes from a metal to a semiconductor in Sc2CO2-P↑ and Sc2CO2-P↓ polarization states. At the same time, the charge at the interface of the VSeTe/Sc2CO2 heterostructure will also be redistributed with the transformation of the ferroelectric polarization state, resulting in the change of the distribution of the electronic states near the Fermi level, and thus the change in the magnetic anisotropy energy (EMAE) of the heterostructure. Interestingly, biaxial strain brings reversibility and non-volatile regulation to the heterostructure of semiconductors and metals. The results provide an effective way to fabricate magnetoelectric coupling devices with 2D multiferroic heterostructures.

Promising two dimensional XSe2/SnS (X= Pt, Zr, Hf) vdW heterostructures for overall water splitting with higher carrier mobilities

The transition metal dichalcogenides (TMDs) are considered as promising candidates for their striking performance in optoelectronic properties. We have designed the novel heterostructures XSe2/SnS using XSe2 (X = Pt, Zr, Hf) TMDs. The stabilities of structural, mechanical, dynamical, and thermal are calculated by formation energies, elastic constants, phonon dispersions and AIMD simulations respectively. The hybrid functional (HSE06) is used to calculate the electronic band structures and optical absorption. The DFT scheme (BGC based) indicates that XSe2/SnS vdWHs are viable photocatalyst for overall water splitting over a broad spectrum of light. The absorption spectra exhibit that these photocatalysts have absorption started from visible to the UV region of light in the order of 105. XSe2/SnS heterostructures display high carrier mobilities of order 104. The Gibbs free energies exhibit that PtSe2/SnS heterostructure has spontaneous, whereas other heterostructures need some external energies for overall water splitting. Finally, the corrected STH efficiency of PtSe2/SnS, ZrSe2/SnS and HfSe2/SnS vdW heterostructures are 12.54%, 28.15%, 21.03% respectively. This study depicts that XSe2/SnS (X = Pt, Zr, Hf) heterostructures are feasible candidates for overall water splitting over a broad range of light spectrum.

Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure

The large magneto-resistance (MR) effect produced by electric control of the magnetic state for van der Waals (vdW) heterostructures composed of vdW intrinsic magnets holds great significance for low-dissipation spintronic devices. Our first-principles calculations reveal that the proposed monolayer WV2N4 is a ferromagnetic (FM) metal with two magnetic V atomic layers, and the interlayer magnetic coupling between two V atomic layers can be switched from FM to antiferromagnetic coupling by applying a small compressive strain. Interestingly, a large MR ratio of 253% is achieved in the proposed graphite/monolayer WV2N4/graphite vdW heterostructure using a −1.5% compressive strain. Combining the strain-induced change in magnetism of monolayer WV2N4 and the graphite/monolayer WV2N4/graphite vdW heterostructure with the inverse piezoelectricity of piezoelectric materials, a feasible strategy is proposed to achieve electric control of the interlayer magnetic coupling of monolayer WV2N4 in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by piezoelectric materials by utilizing the inverse piezoelectricity, thereby generating a large MR ratio in the graphite/monolayer WV2N4/graphite vdW heterostructure clamped by the piezoelectric material. Our work presents a promising avenue for developing energy-efficient spintronic devices.

Extended Kataura plot of single-walled carbon nanotubes and on-demand fabrication of mixed-dimensional heterostructures

We present a comprehensive optical spectroscopic study on air-suspended single-walled carbon nanotubes (SWNTs) with diameters ranging from 1.7 nm to 3.4 nm and at higher-order optical transitions, a previously inaccessible regime. We establish an atlas of resonant radial breathing modes (RBMs) for more than 100 new SWNTs in this unknown regime, thus significantly extending the RBM dataset in Kataura plot and enhancing our knowledge of SWNTs. Additionally, we develop an innovative transfer technique for manipulating individual SWNTs of known chiralities (determined by optical spectroscopies) by integrating a polarization imaging technique with the conventional van der Waals (vdW) dry transfer. The unprecedented spatial and structural control of this technique enables a deterministic fabrication and integration of a variety of novel mixed-dimensional vdW heterostructures that were considered unachievable before. Our work significantly extends RBM dataset of SWNT Kataura plot and represents a huge advancement towards controlled fabrication and integration of mixed-dimensional vdW heterostructures encompassing one-dimensional vdW materials.

Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures.

Band alignment engineering is crucial for facilitating charge separation and transfer in optoelectronic devices, which ultimately dictates the behavior of Van der Waals heterostructures (vdWH)-based photodetectors and light emitting diode (LEDs). However, the impact of the band offset in vdWHs on important figures of merit in optoelectronic devices has not yet been systematically analyzed. Herein, the regulation of band alignment in WSe2/Bi2Te3- xSex vdWHs (0 ≤ x ≤ 3) is demonstrated through the implementation of chemical vapor deposition (CVD). A combination of experimental and theoretical results proved that the synthesized vdWHs can be gradually tuned from Type I (WSe2/Bi2Te3) to Type III (WSe2/Bi2Se3). As the band alignment changes from Type I to Type III, a remarkable responsivity of 58.12 AW-1 and detectivity of 2.91×1012 Jones (in Type I) decrease in the vdWHs-based photodetector, and the ultrafast photoresponse time is 3.2 µs (in Type III). Additionally, Type III vdWH-based LEDs exhibit the highest luminance and electroluminescence (EL) external quantum efficiencies (EQE) among p-n diodes based on Transition Metal Dichalcogenides (TMDs) at room temperature, which is attributed to band alignment-induced distinct interfacial charge injection. This work serves as a valuable reference for the application and expansion of fundamental band alignment principles in the design and fabrication of future optoelectronic devices.

Spin valve effect in the van der Waals heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2

Spintronic devices are regarded as prime candidates for addressing the demands of emergent applications such as in-memory computing and the Internet of Things, characterized by requirements for high speed, low energy consumption, and elevated storage density. Among these, spin valves, serving as fundamental structures of magnetic random-access memory, have garnered substantial attention in recent years. This study introduces an all van der Waals (vdW) heterostructure composed of Fe3GeTe2 (FGT)/tellurene/FGT, wherein a thin layer of Weyl semiconductor Te is interposed between two ferromagnetic FGT layers. The proposed configuration exhibits a characteristic spin valve effect at temperatures below 160 K. This effect is attributed to spin-dependent transport and spin-dependent scattering phenomena occurring at the interfaces of the constituent materials. Furthermore, as temperature decreases, the magnetoresistance ratio (MR) of the device increases, indicative of the heightened polarization ratio of FGT, with an MR of 0.43% achievable as the temperature approaches 5 K. This investigation elucidates the underlying operational mechanisms of two-dimensional spin valve devices and lays the groundwork for the realization of spin-based integrated circuits.

Spin-flop phase transitions in vdW antiferromagnet MnPSe3

Two-dimensional (2D) van der Waal (vdW) magnets are gaining significance in exploring fundamental condensed matter physics and developing cutting-edge technologies. Here, we report the structural and magnetic properties of the antiferromagnetic semiconductor MnPSe3 crystal. Intriguing magnetic behaviors and the strong anisotropy of the bulk crystal have been investigated through temperature-dependent magnetization studies along with the observation of Néel temperature at TN=70±2 K. At temperatures below TN, the bulk MnPSe3 exhibits field-induced spin-flop phase transitions with a spin-flop field (HSF) of nearly 8 kOe at 5 K. These transitions are evidenced from isothermal magnetization measurements conducted at low temperatures. Moreover, temperature-dependent enhancement in HSF was also studied. Our findings motivate the exploration of intrinsic magnetic interactions in 2D MnPSe3 and incorporating it into functional vdW heterostructures and devices.

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS2) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.

Scalable 2D Semiconductor‐Based van der Waals Heterostructure Interface with Built‐in Electric Field for Enhanced Electrochemical Water Splitting

Electrochemical water splitting has received tremendous attention as an eco‐friendly approach to produce hydrogen. Noble metals and their oxides are commonly used as electrocatalysts to reduce activation energy barriers for hydrogen and oxygen evolution reactions in high‐performance electrodes, but their cost, scarcity, and limited stability hinder widespread adoption of electrochemical water splitting. Further advancements are therefore needed to reduce reliance on noble metals and improve the long‐term stability. Herein, solution‐processed 2D van der Waals (vdW) p–n heterostructures as an interfacial layer between catalysts and the electrode are introduced to enhance the catalytic performance. These heterostructures are formed by sequentially assembling electrochemically exfoliated black phosphorus and molybdenum disulfide nanosheets into electronic‐grade p‐ and n‐type semiconductor thin films, with the scalability extending across tens‐of‐centimeter scale areas. Benefiting from the charge distribution and built‐in electric field developed upon heterojunction formation, the vdW heterostructure interfacial layer increases both the catalytic activity and stability of commercial Pt/C and Ir/C catalysts compared to when these catalysts are directly loaded onto electrodes. Additionally, the vdW heterostructure also serves as a template for synthesizing nanostructured Pt and Ir catalysts through electrodeposition, further enhancing the catalytic performance in terms of mass activity and stability.

Optical response of Zr[formula omitted]CO[formula omitted]/MoS[formula omitted] van der Waals heterostructures calculated using first-principles calculations

In the field of material science, the search for a material with an optimal bandgap of approximately 1.40 eV that can act as an efficient photocatalyst for water splitting using solar spectrum irradiation is a noble mission. In this article, we explore the structural, electronic structure, optical and photocatalytic properties of Zr2CO2/MoS2 vdW heterostructures. Our results demonstrates that the Zr2CO2/MoS2 vdW heterostructure can be reliably synthesized. This is due to a minimal lattice mismatch of less than 3%, a negative adhesion energy of -4.23 meV/Å 2, and inherent dynamic stability. The electronic band structure calculations indicate that the Zr2CO2/MoS2 vdW heterostructure is an indirect bandgap semiconductor. We found that the conduction band minimum (CBM) and valance band maximum (VBM) of the heterostructure are located in different monolayers. Furthermore, under −2% biaxial strain a transition from type-I to type-II (staggered) band alignment occurred. Stacking 2D MoS2 on the Zr2CO2 monolayer results in a vdW heterostructure, and as a result, the HSE calculated bandgap of the Zr2CO2/MoS2 vdW heterostructure in most stable configuration lying in the ideal range for photocatalytic applications. We also studied the heterostructure’s optical properties to understand its response to incident photons with energies up to 14 eV. Based on our findings, Zr2CO2/MoS2 heterostructures are desirable for optoelectronic device applications operated in visible range. Our research offers fresh recommendations for developing novel, highly effective photocatalytic compounds with numerous optical device applications.

In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments.

2D van der Waals (vdW) layered semiconductor vertical heterostructures with controllable band alignment are highly desired for nanodevice applications including photodetection and photovoltaics. However, current 2D vdW heterostructures are mainly obtained via mechanical exfoliation and stacking process, intrinsically limiting the yield and reproducibility, hardly achieving large-area with specific orientation. Here, large-area vdW-epitaxial SnSe2/SnSe heterostructures are obtained by annealing layered SnSe. These in situ Raman analyses reveal the optimized annealing conditions for the phase transition of SnSe to SnSe2. The spherical aberration-corrected transmission electron microscopy investigations demonstrate that layered SnSe2 epitaxially forms on SnSe surface with atomically sharp interface and specific orientation. Optical characterizations and theoretical calculations reveal valley polarization of the heterostructures that originate from SnSe, suggesting a naturally adjustable band alignment between type-II and type-III, only relying on the polarization angle of incident lights. This work not only offers a unique and accessible approach to obtaining large-area SnSe2/SnSe heterostructures with new insight into the formation mechanism of vdW heterostructures, but also opens the intriguing optical applications based on valleytronic nanoheterostructures.

Giant tunnel magnetoresistance in in-plane magnetic tunnel junctions based on the heterointerface-induced half-metallic 2H-VS[formula omitted]

Magnetic tunnel junctions (MTJs) constructed from atomically thin two-dimensional (2D) magnetic materials have attracted great attention in recent years because it meets the requirements of miniaturization and high tunability of next-generation spintronic devices. In this work, we demonstrate that the ferromagnetic semiconductor VS2 is transformed into a half-metal in VS2/MoSSe vdW heterostructure. Based on the heterostructure, we design an in-plane MTJs that comprise a monolayer VS2 barrier sandwiched between two VS2/MoSSe heterostructure electrodes. Through density functional calculations combined with a nonequilibrium Green’s function technique, it is found that the tunnel magnetoresistance (TMR) ratio as high as 4.35 × 109% can be achieved. Moreover, the TMR ratio can be tuned by the barrier length, and the maximum value exceeds 1015%. These results not only provide a novel route for designing MTJs using 2D ferromagnetic semiconductor material, but also demonstrate the great importance of vdW heterostructures in the design of spintronic devices.

Piezoelectricity of Janus group-III monochalcogenide monolayers, multilayers and their vdW heterostructures: Insight from first-principles calculations

Using first-principles calculations, we have explored the piezoelectric properties of Janus multilayers and vdW heterostructures based on Janus group-III monochalcogenides. Our calculation results show that all the in-plane and out-of-plane piezoelectricity exists in Janus group-III monochalcogenide multilayers with the atomic radii difference and within intra-layer dipole moments affecting the e33/d33 value. For the vdW heterostructures, the e33 depends on the stacking configuration and increases with the decreasing interlayer distance. Furthermore, the piezoelectric effect properties of the vdW heterostructures are independent of the biaxial strain. Our understanding of how the layer number and vdW integration affect the piezoelectric effect in 2D materials provides theoretical guidance for the experimental application of 2D Janus monolayer and their vdW heterostructures and will also contribute to the development of robust electrical-mechanical-coupled systems with large power densities and energy harvesting capabilities.

Low Dielectric Medium for Hyperbolic Phonon Polariton Waveguide in van der Waals Heterostructures.

Polar van der Waals (vdW) crystals, composed of atomic layers held together by vdW forces, can host phonon polaritons-quasiparticles arising from the interaction between photons in free-space light and lattice vibrations in polar materials. These crystals offer advantages such as easy fabrication, low Ohmic loss, and optical confinement. Recently, hexagonal boron nitride (hBN), known for having hyperbolicity in the mid-infrared range, has been used to explore multiple modes with high optical confinement. This opens possibilities for practical polaritonic nanodevices with subdiffractional resolution. However, polariton waves still face exposure to the surrounding environment, leading to significant energy losses. In this work, we propose a simple approach to inducing a hyperbolic phonon polariton (HPhP) waveguide in hBN by incorporating a low dielectric medium, ZrS2. The low dielectric medium serves a dual purpose-it acts as a pathway for polariton propagation, while inducing high optical confinement. We establish the criteria for the HPhP waveguide in vdW heterostructures with various thicknesses of ZrS2 through scattering-type scanning near-field optical microscopy (s-SNOM) and by conducting numerical electromagnetic simulations. Our work presents a feasible and straightforward method for developing practical nanophotonic devices with low optical loss and high confinement, with potential applications such as energy transfer, nano-optical integrated circuits, light trapping, etc.