Nanostructured composite films based on Ag-Si containing silver nanoparticles are used as a material for SERS (Surfaceenhanced Raman spectroscopy) substrates, plasmonic back reflector, nanoplasmonic sensors, nonlinear optics devices, memristor structures, etc. Due to the widespread use of nanocomposite films based on Ag-Si, there is a need to develop simple and affordable methods for their production compatible with semiconductor technology. Therefore, this work is devoted to the production of an Ag80Si20 nanocomposite film with a high silver content (80 at.%) by ion-beam sputtering with simultaneous control of the morphology, structure, phase composition and electrical properties of the manufactured sample. As a result of complex studies using X-ray diffraction, ultra-soft X-ray emission spectroscopy, SEM and AFMmicroscopy, it was found that the film is a nanocomposite material based on silver nanoparticles with an average size of ~15÷30 nm. At the same time, some silver nanoparticles are in direct contact, while some Ag nanoparticles are isolated from each other by a shell of silicon dioxide SiO2 and amorphous silicon a-Si. Such a nanogranulated structure of the Ag80Si20 film causes the presence in the test sample of the effect of switching from a high-resistance state (880 Ohm) to a lowresistance state (~1 Ohm) under the action of a voltage of ~ 0.2 V. As a result of the formation of conductive filaments (CF) of Ag atoms in the dielectric layer between the silver granules
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