Tunneling Rate Research Articles

High-fidelity spin readout via the double latching mechanism

Projective measurement of single-electron spins, or spin readout, is among the most fundamental technologies for spin-based quantum information processing. Implementing spin readout with both high-fidelity and scalability is indispensable for developing fault-tolerant quantum computers in large-scale spin-qubit arrays. To achieve high fidelity, a latching mechanism is useful. However, the fidelity can be decreased by spin relaxation and charge state leakage, and the scalability is currently challenging. Here, we propose and demonstrate a double-latching high-fidelity spin readout scheme, which suppresses errors via an additional latching process. We experimentally show that the double-latching mechanism provides significantly higher fidelity than the conventional latching mechanism and estimate a potential spin readout fidelity of 99.94% using highly spin-dependent tunnel rates. Due to isolation from error-inducing processes, the double-latching mechanism combined with scalable charge readout is expected to be useful for large-scale spin-qubit arrays while maintaining high fidelity.

Phenyl Radical Activates Molecular Hydrogen Through Protium and Deuterium Tunneling.

Activating dihydrogen, H2, is a challenging endeavor typically achieved using transition metal centers. Pure main group compounds capable of this are rare and have emerged in recent decades. These systems rely on synergistic donor-acceptor interactions with H2's antibonding σ* and bonding σ orbital. An alternative (hydrocarbon) radical-mediated activation is problematic, because the H-H bond is stronger (104.2kcalmol-1) than most C-H bonds. Here, we explore using the phenyl radical to tackle this, forming benzene with a C-H bond energy (112.9 kcal mol-1) that provides a thermodynamic driving force. We mainly observe a benzene-HI complex upon photolysis of iodobenzene in an H2-doped neon matrix at 4.4 K despite a barrier of 7.6kcalmol-1, while phenyl radical forms in case of the heavier D2 isotopologue. When D2 molecules are allowed to diffuse, mono-deuterated benzene accumulates within hours. Computations using path integral-based instanton theory highlight that primarily the transferred hydrogen atom is moving during the reaction which greatly increases the tunneling probability. In excellent agreement with the experimental results, we predict significant tunneling rate constants for both isotopologues, H2 and D2, featuring a strong kinetic isotope effect of up to four orders of magnitude at the lowest temperatures.

Phenyl Radical Activates Molecular Hydrogen Through Protium and Deuterium Tunneling

Activating dihydrogen, H2, is a challenging endeavor typically achieved using transition metal centers. Pure main group compounds capable of this are rare and have emerged in recent decades. These systems rely on synergistic donor‐acceptor interactions with H2’s antibonding σ* and bonding σ orbital. An alternative (hydrocarbon) radical‐mediated activation is problematic, because the H−H bond is stronger (104.2 kcal mol−1) than most C−H bonds. Here, we explore using the phenyl radical to tackle this, forming benzene with a C−H bond energy (112.9 kcal mol−1) that provides a thermodynamic driving force. We mainly observe a benzene‐HI complex upon photolysis of iodobenzene in an H2‐doped neon matrix at 4.4 K despite a barrier of 7.6 kcal mol−1, while phenyl radical forms in case of the heavier D2 isotopologue. When D2 molecules are allowed to diffuse, mono‐deuterated benzene accumulates within hours. Computations using path integral‐based instanton theory highlight that primarily the transferred hydrogen atom is moving during the reaction which greatly increases the tunneling probability. In excellent agreement with the experimental results, we predict significant tunneling rate constants for both isotopologues, H2 and D2, featuring a strong kinetic isotope effect of up to four orders of magnitude at the lowest temperatures.

A comprehensive study of gate-induced drain leakage current and electrical characteristics in nanosheet field-effect transistors due to variation in structural parameters and ambient temperature

Abstract IIn this paper, two substrate optimization approaches of triple stacked Nanosheet FET (SNSHFET), namely optimization of buried oxide and selective deposition of punch through stopper (PTS) substrate, have been examined and simulations have been carried out using Technology Computer-Aided (TCAD) software. A comprehensive study of leakage current and key electrical characteristics (I¬ON, VT, SS, DIBL) have also been extracted based on variation in temperature from 298 K to 450 K, sheet width, fin pitch, substrate width, and source/drain doping, as well as different substrates. When the ambient temperature of SNSHFET is varied from 298 K to 450 K, the gate-induced drain leakage (GIDL) current increases and degrades the VT and ION/IOFF ratio. GIDL current also increases with increased doping of the source and drain. Also, the impact of ultra-thin body substrate in SNSHFET is studied for the reduction in GIDL current and optimization in the performance. It is observed that a reduction in the substrate width and the nanosheet width decreases the GIDL current, while variation in Inter-fin pitch has no significant impact on the GIDL current and other electrical characteristics. The band-to-band tunneling rate and electric field profiles are observed at the channel-drain and gate-substrate overlap region for understanding the physical insights of leakage current in the SNSHFET. This work also answers the dependency of GIDL current on the gate and drain voltage supply respectively. In addition to that, how GIDL current responds to the variation in the source-drain doping and with different PTS doping has been explained. The 3 nm-based SNSHFET is designed and its electrical and GIDL characteristics are compared with novel devices like Forksheet FET and Complementary FET.

Design and investigation of electrostatic doped heterostructure vertical Si(1-x)Gex/Si nanotube TFET

Researchers are inclining toward heterostructures suitable lattice matching, in Tunnel FETs to eliminate the difficulties of decreased On-Current, subthreshold swings, and ambipolar behavior. Nowadays, Electrostatic doping (ED) is a scrutinized substitute device for creating areas with a high electron or hole density to the conventional doped devices. This manuscript proposes an Electrostatic Doped Heterostructure Vertical Si(1-x)Gex/Si Nanotube Tunnel Field Effect with performance scanned by analyzing the different device parameters, considering the energy band diagram, concentrations of electrons, holes, potential, and electric field. In comparison to the Nanowire TFETs, the area, and rate of tunneling of the proposed device stand superior with a better ION/IOFF ratio of 1.56∗1013 and a lower OFF-current of about ∼10−18A/μm. The device exhibits a Drain current (IDS) of 2.39∗105A/μm. The architecture of the suggested device possessing Si(1-x)Gex/Si structure exhibits enhanced characteristics like improved steepness of the sub-threshold slope, ION/IOFF ratio, drain current, and lowered OFF-current.

Gradual Change between Coherent and Incoherent Tunneling Regimes Induced by Polarizable Halide Substituents in Molecular Tunnel Junctions.

This paper describes a gradual transition of charge transport across molecular junctions from coherent to incoherent tunneling by increasing the number and polarizability of halide substituents of phenyl-terminated aliphatic monolayers of the form S(CH2)10OPhXn, X = F, Cl, Br, or I; n = 0, 1, 2, 3, or 5. In contrast to earlier work where incoherent tunneling was induced by introducing redox-active groups or increasing the molecular length, we show that increasing the polarizability, while keeping the organization of the monolayer structure unaltered, results in a gradual change in the mechanism of tunneling of charge carriers where the activation energy increased from 23 meV for n = 0 (associated with coherent tunneling) to 257 meV for n = 5 with X = Br (associated with incoherent tunneling). Interestingly, this increase in incoherent tunneling rate with polarizability resulted in an improved molecular diode performance. Our findings suggest an avenue to improve the electronic function of molecular devices by introducing polarizable atoms.

Optical assessment of vertical TFET based on heterojunction of GaSb-Si

This paper investigates the electrical and opto-sensing analysis of hetero stack vertical TFETs based on III/V group Gallium antimonide (GaSb)-Si at various wavelengths within the visible spectrum. Initially, the drain current, energy band diagram, and electron density contour plot are extracted in order to study the DC and electrical behavior of the device. Following that, their performance is evaluated by altering the source side thickness and observe the tunneling rate of device. Furthermore, the photo application of the device is noticed by computing the critical optical parameter such as sensitivity (Sn), noise factor, and efficient characteristics. Finally, a comparative table is included to set the benchmark and highlight the importance of hetero stack TFET. The device's maximum reported sensitivity is approximately 25.2 and responsivity (R) is 0.8 A/Watt at 320 nm wavelength. Additionally, we examined the effect of trap charges under light state at the gate-channel, isolator-channel, and source-channel interface respectively.

A modified gate oxide tunnel Field-Effect transistor (TFET) biosensor to identify receptor Tyrosine-Protein kinase 2 (C-erbB-2) in Serum/Saliva

This research demonstrates an analysis of a modified gate oxide tunnel field-effect transistor (TFET) with pocket (Poc-MGOTFET) biosensor for the incredibly sensitive and real-time identification of the breast cancer (BC) biomarker receptor tyrosine-protein kinase (C-erbB-2) in serum and saliva. This research investigates the impact of interface charge modulation in Poc-MGOTFET biosensor with embedded cavities for rapid, accurate, and reliable identification of antigens in bodily fluids, like serum and saliva. The TCAD Sentaurus is used to numerically simulate the proposed biosensor in 2D. The dual cavity etched underneath the dual gate electrode of the proposed biosensor facilitates biomolecule immobilization. This enhances the ability of biomolecules to regulate the source/channel tunneling rate and the proposed biosensor’s electrical performance metrics. A numerical model is developed for the interface charge equivalent of the C-erbB-2. The sensitivity of the device to different C-erbB-2 concentrations in serum/saliva has been studied. The results of our research demonstrate that Poc-MGOTFET, featuring an extended gate structure, modified gate oxide, and pocket along the source side, reduces the leakage current (ILeakage) and OFF current (IOFF), enhances the probability of tunneling, boosts gate control for a greater ON current (ION) and ION/IOFF ratio, and increases sensitivity. Moreover, increased sensitivity by an order of magnitude 106 results from the effect of interface charges corresponding to varying concentrations of C-erbB-2 biomarkers on the sensitivity of the biosensor (as measured by the ION/IOFF ratio).

Proposal and evaluation of Mg2Si-based vertical tunnel field effect transistor for enhanced performance

This work investigates the performance of silicon-on-insulator (SOI) based vertical heterojunction tunnel FET with magnesium silicide (Mg2Si) as source material (Mg2Si-VTFET) with silicon-based counterpart (Si-VTFET). The investigation utilizes SILVACO TCAD tool to analyse various metrics including electrical characteristics, radio-frequency performance, linearity, and distortion. Incorporation of low bandgap material at source forms hetero-junction at source-channel interface, thereby reducing the tunneling path and enhancing the tunneling rate of charge carriers. ON-state current (ION) and current switching ratio (ION/IOFF) for Mg2Si-VTFET improves by factor of approximately ∼ 105 and 102 times. Mg2Si-VTFET outperforms Si-VTFET in terms of ION current for low biasing voltages, transconductance (gm), gain-bandwidth-product (GBP), cut-off frequency (fT) and transit-time. However, Mg2Si-VTFET has better linearity and reduced distortions in terms of VIP2 and HD2 metrics. HD2 suppresses by 53.8 % for Mg2Si-VTFET over Si-VTFET. This suggests that Mg2Si-VTFET is better suited for applications requiring low distortion, such as in audio amplifiers or communication systems. Therefore, Mg2Si-VTFET shows strong candidacy over Si based counterpart for low power circuits.

Design of shortcuts to adiabaticity for Bose-Einstein condensates dynamics in soliton Josephson junctions

Abstract This article primarily establishes a two-soliton system and employs the Lewis-Riesenfeld invariant inverse control method to achieve shortcuts to adiabaticity (STA) technology. We study on the atomic soliton Josephson junctions (SJJs) device and subsequently compare and analyze it with atomic bosonic Josephson junctions (BJJs). Moreover, we use higher-order expressions of the auxiliary equations to optimize the results and weaken the detrimental effect of the sloshing amplitude. We find that in the adiabatic shortcut evolution of two systems with time-containing tunnelling rates, the SJJs system is more robust over a rather short time evolution. In comparison with linear ramping, the STA technique is easier to achieve with the precise modulation of the quantum state in the SJJs system.

Novel III-V inverted T-channel TFET with dual-gate impact on line tunneling, with and without negative capacitance

We introduce two novel III-V inverted T-channel vertical line tunnel field-effect transistor (TFET) configurations, leveraging staggered bandgap compound materials. Design D-1 operate s without negative capacitance, while Design D-2 incorporates negative capacitance. Both designs employ area-enhanced gate normal line tunneling with dual-gate impact, utilizing InGaAs and GaAsSb materials to effectively reduce the overall bandgap. The double-area line tunneling, facilitated by the double gate, significantly enhances performance. D-1 exhibits notable improvements, with an ION value reaching 596.55 μA/μm, an ION/IOFF ratio of 2.5 × 108, a minimum subthreshold swing (SS) of 9.75 mV/dec, and an average subthreshold swing (AVSS) of 31.93 mV/dec. Building upon these achievements, D-2 takes a step further by implementing NC through a ferroelectric layer gate stack, significantly increasing the line tunneling rate symmetrically on the left and right channels beneath both gates. This marks the first proposal of double gate area-enhanced line tunneling with negative capacitance in this paper. D-2 demonstrates remarkable performance for future low-power applications.

Investigation of optical parameters in Ge source SELBOX tunnel FET under visible spectrum

In this work, we have implemented Ge source Selective buried oxide (SELBOX) Tunnel FET for photo sensing applications in the visible range of spectrum for wavelength (λ = 300–700) nm. The various electrical parameters are extracted under dark and illumination states considering the presence and absence of trap charges at the interface of gate oxide and semiconductor. It is seen that at illumination state, the drain current degrades at low gate voltage and presence of traps lead to reduced tunnelling rate. Further, the spectral sensitivity, responsivity, and signal to noise ratio (SNR) are extracted for this TFET based photosensor with variation in λ. Result reveals that spectral sensitivity, responsivity, and signal to noise ratio (SNR) are 20.8, 0.5, and 49.5 dB, respectively, at λ = 300 nm. Further, the presence of trap charges result in degradation of these parameters. Finally, a comparative study of optical parameters with the existing data is highlighted.

Electroweak phase transition with a double well done doubly well

We revisit the electroweak phase transition in the scalar singlet extension of the standard model with a ℤ2 symmetry. In significant parts of the parameter space the phase transition occurs in two steps — including canonical benchmarks used in experimental projections for gravitational waves. Domain walls produced in the first step of the transition seed the final step to the electroweak vacuum, an effect which is typically neglected but leads to an exponentially enhanced tunnelling rate. We improve previous results obtained for the seeded transition, which made use of the thin-wall or high temperature approximations, by using the mountain pass algorithm that was recently proposed as a useful tool for seeded processes. We then determine the predictions of the seeded transition for the latent heat, bubble size and characteristic time scale of the transition. Differences compared to homogeneous transitions are most pronounced when there are relatively few domain walls per hubble patch, potentially leading to an enhanced gravitational wave signal. We also provide a derivation of the percolation criteria for a generic seeded transition, which applies to the domain wall seeds we consider as well as to strings and monopoles.

Modification entropy of Kerr–Sen-like black hole in Lorentz-breaking bumblebee gravity

The Lorentz symmetry breaking theory not only affects the space–time background but also the dynamic behavior of bosons and fermions in curved space–time. Therefore, the Lorentz symmetry breaking theory will affect the quantum tunneling rate, Hawking temperature, black hole entropy, and other physical quantities of black holes. According to the modification of the space–time background and the modification of the particle dynamic equations, the quantum tunneling radiation of the Kerr–Sen-like black hole in bumblebee gravitational theory and its related contents are deeply studied. The research methods and a series of new results obtained in this paper are discussed. This makes the research methods and conclusions in this paper of more astrophysical significance and reference value.

Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors.

This article provides insights in designing a dielectrically modulated biosensor by adopting high-k stacked gate oxide proposition in a bi-metal hetero-juncture Tunnel Field Effect Transistor (BM-SO-HTFET) with Si0.6Ge0.4 source. The integrated effect of heterojunction and stacked gate oxide leads to enhanced electrical performance of the proposed device in terms of carrier mobility and suppressed leakage current. Nano-cavity engraved beneath the bi-metal gate structure across the source/channel end acts the binding site of the biomolecules to be detected. This Configuration leads to improved control of biomolecules over source/channel tunnelling rate and the same is reflected in the sensing ability of the device while extracting the ON current sensitivity (SON) of the sensor. The reported biosensor is simulated using Silvaco ATLAS calibrated simulation framework. The analysis of the device sensitivity is carried out varying dielectric constants (k) of various biomolecules, both neutral as well as charged. Our study reveals that BM-SO-HTFET with Ge mole fraction composition x = 0.4 exhibits sensitivity as high as 4.1 × 1010 for neutral biomolecules and 3.2 × 1011 for positively charged biomolecules with k = 12. Furthermore, a transient response profile for the drain current with various biomolecules is explored to determine the varying settling time. From the simulation results, it is noted that BM-SO-HTFET exhibits ON current sensitivity of 4.1 × 1010 and 3.2 × 1011 for neutral and charged biomolecules respectively. In addition to this, for highly sensitive and real time detection of biomolecules, the impact of temperature and certain non-ideal factors drifting from ideal case of fully filled cavity have also been considered to analyze its optimum sensing performance.

Analysis of One-dimensional Double-potential Barrier Structures Resonant Tunnelling Based on Transmission Matrices

The comprehension of the tunnel effect, the passage of matter waves and particles across a high potential barrier, was the most astounding of all discoveries in quantum mechanics. Research on tunnelling in semiconductors and superconductors, as well as the development of scanning tunnelling microscopy, garnered five Nobel prizes in physics. In this study, the resonant tunnelling effect of electron tunnelling through a one-dimensional double-potential barrier was found and verified by solving the time-independent Schrödinger equation and calculating the transmittance rate of the electron tunnelling through the two potential barriers by using the transmission matrix technique performed by MATLAB. According to the analysis, the transmittance rate was one under certain specific conditions (under some specific incident energy values or some specific distance between two potential barriers), which was called as resonant tunnelling. However, in this study, square potential wells were analyzed, which can be considered merely as ideal models in real life, and therefore all results are idealized. For further investigations, researchers can use more realistic parameters to set up potential wells and analyze real-life problems.

Metal inserted doping less dielectrically modulated TFET biomarker for SARs-CoV-2 detection

In this paper, a metal strip loaded doping less TFET (MS-DLTFET) biomarker with four cavities is proposed for SARs-CoV-2 detection virus. The results demonstrate that the proposed device offers an improved biomarker performance by introducing the charged plasma concept and the metal strips. The electrical parameters such as electron tunneling rate, drain current (Ids), current ratio (ION/IOFF), threshold voltage (Vth) are evaluated through simulations by immobilized dielectric constant (k) and charge density (ρ) of the bioelements in the nano-gap cavities. In addition, their sensitivity is also calculated with respect to air. The results depict that the proposed device tenders better performance in terms of Ids, ION/IOFF and Vth sensitivity as compared to existing devices. The device's response time under varying k and ρ values are investigated. The non-uniform cavity configurations formed due to steric hindrance effect are studied. It is found that concave configuration offers the best performance compared to other. Furthermore, the cavity size analysis is also performed to optimize the device performance.

Performance investigation of ferroelectric L-shaped tunnel FET with suppressed corner tunneling for low power applications

In this work, a ferroelectric L-shaped tunnel FET (FE-LSTFET) is introduced to offer improvement in various DC and analog/high-frequency parameters. In this design, the incorporated FE layer enhances the vertical electric field at the source-channel interface, which improves the tunneling rate of charge carriers during the ON-state. The effect of negative capacitance (NC) and L-shaped N+ pocket causes dominance of vertical tunneling over corner tunneling (mainly at low gate voltages), which in turn reduces the transition voltage and current from 0.85 to 0.25 V and 1.2 × 10-8 to 5.67 × 10-11 A/µm respectively, thereby improving parameters such as ION, IOFF, and SSavg. Further, optimization of the thickness and doping concentration helps to keep the N+ pocket in fully depleted mode and consequently, ION/IOFF is increased from 0.3 × 1012 to 1.2 × 1014 and SSavg is reduced from 52 to 30 mV/decade. Subsequently, NC parameters such as remanent polarization (Pr) and coercive electric field (Ec) are optimized to increase the memory window, which further improves the read margin of FE-LSTFET as a memory device. Furthermore, TCAD-based simulation results show that optimizing the FE thickness improves ION and IOFF in the order of ∼ 1 and ∼ 2, respectively compared to those of C-LSTFET. With an optimum drain-overlap length, IOFF is shown to reduce from 6.6 × 10-17 to 5.43 × 10-19 A/µm due to a reduction in the SRH generation rate of the charge carriers. Despite the degradation in Cgg due to drain-overlap by the stack of FE and SiO2 layers, a significant increase in e-BTBT helps in achieving a transconductance of 2.48 × 10-4 S/µm, thus leading to a large cut-off frequency of 34.12 GHz. Next, analysis of the FE-LSTFET-based inverter shows significant improvements in several parameters including propagation delay and full swing. Moreover, FE-LSTFET shows more reluctance to self-heating effects than C-LSTFET as ION/IOFF is increased by an order of ∼ 3 at 500 K. Lastly, the performance of FE-LSTFET is benchmarked with existing TFET designs indicating that FE-LSTFET is suitable as a high-speed and low-power memory device.

A Mg2Si/Si heterojunction based dielectric modulated dopingless TFET biosensor for label free detection

In this work, we contrasted the potential of Mg2Si/Si heterojunction-based dopingless (DL) double gate tunnel field effect transistor (DGTFET) with conventional (C)-DL-DGTFET. The simulation results exhibit excellent capabilities of Mg2Si source DL-DGTFET in terms of electrical properties, that are ION, ION/IOFF, electron tunnelling rate, Vth and SS in comparison to C-DL-TFET. A remarkable improvement of 77.5 % and 81.3 % is observed while computing Vth and SS, in the case of Mg2Si source DL-DGTFET. For that reason, to avail most advantage of Mg2Si/Si heterojunction, the proposed device with similar specifications and dimensions is critically analysed for biosensing applications. Dual cavities (20 nm x 5 nm) are carved underneath gate electrodes near source channel junction to grab the biomolecules. The proposed biosensor (Mg2Si source DL-DGTFET) exhibits significant sensitivity results for both charged (deoxyribonucleic acid (DNA)) and uncharged (neutral) biomolecules. Also, we have reported an impact on biosensor sensitivity with variation in the height of nanocavity (tbio). The effect of steric hindrance on sensitivity is analysed by considering four step profiles - increasing, decreasing, convex and concave. The result reveals the competency of Mg2Si/Si heterojunction DL-DGTFET in terms of overall device sensitivity.

Design and analysis of hetero-dielectric Junctionless-TFET(JL-TFET) with N+ pocket as label free biosensors

This paper includes sensitivity assessment of label-free biosensors using hetero dielectric Junctionless-TFET (HD-JL-TFET) thorough TCAD simulator. The fundamental structure, operation and design of a Junctionless-TFET (HD-JL-TFET) as biosensor are investigated in this paper. For the purpose of detecting the biomolecule, a nano-gap is added close to the source end between the gate and channel. To test the sensing potential, we adjusted the charge density and material dielectric constant (K) by comprehensive calibrated device simulation. For several biomolecules, the device’s sensitivity was examined as surface potential, electron tunnelling rate, and conduction-valence band edge fluctuation. Additionally, the Id versus VGS features, the sensitivity to the drain current, and the ION/IOFF fluctuation are also examined. By contrasting neutral or charged biomolecules using various dielectric constants, the sensitivity characteristics of positive, negative, and neutral biomolecules are examined. The development of biosensors, which enable the rapid and precise detection of multiple biomolecules, has revolutionized the field of bioanalysis.