Abstract
This paper investigates the electrical and opto-sensing analysis of hetero stack vertical TFETs based on III/V group Gallium antimonide (GaSb)-Si at various wavelengths within the visible spectrum. Initially, the drain current, energy band diagram, and electron density contour plot are extracted in order to study the DC and electrical behavior of the device. Following that, their performance is evaluated by altering the source side thickness and observe the tunneling rate of device. Furthermore, the photo application of the device is noticed by computing the critical optical parameter such as sensitivity (Sn), noise factor, and efficient characteristics. Finally, a comparative table is included to set the benchmark and highlight the importance of hetero stack TFET. The device's maximum reported sensitivity is approximately 25.2 and responsivity (R) is 0.8 A/Watt at 320 nm wavelength. Additionally, we examined the effect of trap charges under light state at the gate-channel, isolator-channel, and source-channel interface respectively.
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