Investigation of optical parameters in Ge source SELBOX tunnel FET under visible spectrum

Abstract

In this work, we have implemented Ge source Selective buried oxide (SELBOX) Tunnel FET for photo sensing applications in the visible range of spectrum for wavelength (λ = 300–700) nm. The various electrical parameters are extracted under dark and illumination states considering the presence and absence of trap charges at the interface of gate oxide and semiconductor. It is seen that at illumination state, the drain current degrades at low gate voltage and presence of traps lead to reduced tunnelling rate. Further, the spectral sensitivity, responsivity, and signal to noise ratio (SNR) are extracted for this TFET based photosensor with variation in λ. Result reveals that spectral sensitivity, responsivity, and signal to noise ratio (SNR) are 20.8, 0.5, and 49.5 dB, respectively, at λ = 300 nm. Further, the presence of trap charges result in degradation of these parameters. Finally, a comparative study of optical parameters with the existing data is highlighted.