Abstract
— In this paper, the switching and photo sensing analysis of cladding layer based dopingless Tunnel FET (CDL-TFET) has been examined under visible range of spectrum. Initially, the impact of cladding layer in DL-TFET on electrical parameter is observed by varying the source material and thickness of source region. Furthermore, CDL-TFET is used for photo sensing application under the light state at various wavelength of light incident. The various optical figure of merits (FoMs) like spectral sensitivity (Sn), Signal to noise ratio (SNR), Responsivity (R), and quantum efficiency (η) is extracted to realize the behavior of photosensor. The maximum value of Sn is 48, R of 0.74 (A/Watt), SNR of 68.8 dB, and η of 3 are obtained at λ = 300 nm. Further, impurity trap charge effects are also observed at the interface and bulk of TFET. Finally, a comparison table has been presented to signify the importance of cladding layer based DL-TFET photo sensor with existing literature.
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