Transient Current Response Research Articles

Modeling Electrochemical Impedance Spectroscopy Using Time-Dependent Finite Element Method

A time-dependent electrochemical impedance spectroscopy (EIS) model is presented using the finite element method (FEM) to simulate a 2D interdigitated electrode in an aqueous NaCl electrolyte. Developed in COMSOL Multiphysics, the model incorporates ion transport, electric field distribution, Stern layer effects, and electrode sheet resistance, governed by the Poisson and Nernst–Planck equations. This model can predict the transient current response to an applied excitation voltage, which gives information about the dynamics of the electrochemical system. The simulation results are compared with the experimental data, reproducing key features of the measurements. The transient current response indicates the need for multiple excitation cycles to stabilize the impedance measurement. At low frequencies (<1 kHz), the voltage drop at the Stern layer is significant, while at higher frequencies (>100 kHz), the voltage drop due to sheet resistance dominates. Moreover, the amplitude of the excitation voltage influences the EIS measurement, higher amplitudes (above 0.1 V) lead to non-linear impedance behavior, particularly at low ion concentrations. Discrepancies at low frequencies suggest that Faradaic processes may need to be incorporated for improved accuracy. Overall, this model provides quantitative insights for optimizing EIS sensor design and highlights critical factors for high-frequency and low-concentration conditions, laying the foundation for future biosensing applications with functionalized electrodes.

Transient Current Analysis of GaN Neutron Detector Based on the SRIM and TCAD Methods

Utilizing Technology Computer Aided Design (TCAD) software, this study determines the optimal thickness and doping concentration for the intrinsic gallium nitride (GaN) layer in a p-i-n GaN diode to improve detection efficiency and reliability. The study examines energy loss and the transient current response induced by alpha and 3H particles within the GaN p-i-n diode. Additionally, TCAD elucidates the transient current behavior arising from electron-hole pair generation, utilizing the Stopping and Range of Ions in Matter SRIM-2013 linear energy transfer distribution as a guide. The simulations disclose that the tailing effect in the transient current response results from radiation-induced hole accumulation. Elevated applied bias results in increased transient current pulse amplitude, attributed to an extended depletion region that boosts carrier collection. These insights are expected to drive advancements in GaN-based neutron detector technology, essential for advancing nuclear and space science applications in the next generation.

Synergistic role of indium doping and g-C3N4 reinforcement in boosting the visible light-triggered rhodamine B and diclofenac sodium salt degradation over rare earth molybdate

Designing and fabricating cost-efficient and eco-friendly photocatalysts for removing organic pollutants from wastewater streams is a crucial research objective for effectively managing industrial effluents to tackle environmental sustainability issues. In this study, we prepared bare cerium molybdate (Ce2(MoO4)3, M1) and indium-doped cerium molybdate (In- Ce2(MoO4)3, M2) photocatalysts via a hydrothermal method. We then synthesized a nanocomposite of In- Ce2(MoO4)3 (M3) with the promising material graphitic carbon nitride (g-C3N4) using an ultrasonication approach. The synthesized photocatalysts were effectively applied to degrade the Rhodamine B dye and diclofenac sodium salt (a drug) from synthetic industrial wastewater through a photocatalysis approach. The impact of indium (In3+) doping on the bare (Ce2(MoO4)3 and the strong interaction between the (In-Ce2(MoO4)3 and g-C3N4 nanosheets were analyzed through physical and electrochemical techniques, including SEM, EDS, XRD, FTIR, UV–Vis spectroscopy, and EIS analysis. The comprehensive photocatalytic degradation of dye and the drug via first-order kinetic parameters under visible light irradiation for all the prepared catalyst samples was evaluated. The nanocomposite In-Ce2(MoO4)3/g-C3N4 exhibited excellent photocatalytic activity, degrading the maximum amount of RhB dye and drug (RhB:96 %, drug:87 %) in 90 min with a higher rate constant (k) compared to In-Ce2(MoO4)3 (RhB:69 %, drug:56 %) and Ce2(MoO4)3 (RhB:56 %, drug:38 %). Furthermore, the In-Ce2(MoO4)3/g-C3N4 samples produced a 7-fold and 3-fold increase in transient photogenerated current response compared to pristine Ce2(MoO4)3 and In-Ce2(MoO4)3 samples, respectively. These findings pave the way for synthesizing an economical, versatile, and efficient In-Ce2(MoO4)3/g-C3N4 photocatalyst to eliminate pollutants from industrial wastewater streams and boost environmental sustainability.

A nonlinear phase-field model of corrosion with charging kinetics of electric double layer

Abstract A nonlinear phase-field model is developed to simulate corrosion damage. The motion of the electrode-electrolyte interface follows the usual kinetic rate theory for chemical reactions based on the Butler-Volmer equation. The model links the surface polarization variation associated with the charging kinetics of an electric double layer (EDL) to the mesoscale transport. The effects of the EDL are integrated as a boundary condition on the solution potential equation. The boundary condition controls the magnitude of the solution potential at the electrode$-$electrolyte interface. The ion concentration field outside the EDL is obtained by solving the electro$-$diffusion equation and Ohm's law for the solution potential. The model is validated against the classic benchmark pencil electrode test. The framework developed reproduces experimental measurements of both pit kinetics and transient current density response. The model enables more accurate information on corrosion damage, current density, and environmental response in terms of the distribution of electric potential and charged species. The sensitivity analysis for different properties of the EDL is performed to investigate their role in the electrochemical response of the system. Simulation results show that the properties of the EDL significantly influence the transport of ionic species in the electrolyte.

A 99.99% current efficiency fast transient response capacitor-less LDO with feedforward compensation technique based on small-signal gain stage

An ultra-low power capacitor-less LDO with feedforward compensation technique based on the small-signal gain stage and composite transient enhancement structure is proposed. The feedforward compensation technique based on the small-signal gain stage reaches a low frequency zero ,by utilizing the compensating effect of the zero to relieve the adverse effects of the pole, thereby enhancing the stability and performance of the circuit. Furthermore, the small gain stage can adjust the quiescent current consumption,contributing to a significant reduction in system energy consumption. The proposed composite transient enhancement structure can reduce the transition time of the circuit, adjust the gain of the circuit under different operating conditions to achieve precise gain control and improve the transient performance of the system. The proposed LDO is designed using SMIC 0.18um CMOS process. The simulation results show the total quiescent current is 0.94uA and the current efficiency is up to 99.99%. The extremely low FoM value of 0.04 represents a good transient performance. Synthesizing the comparison of various parameters, the superiority of this design can be clearly concluded.

Noise Aware Fully Integrated Low Power and Low Inrush Current Fast Transient Response LDO

The complexity of Systems-on-Chip (SoC) designs necessitates robust linear regulator architectures to ensure stable operations and efficient power management in modern devices. In response to this demand, low-dropout (LDO) voltage regulators have emerged as a focal point for their scalability and superior performance across diverse application domains. This paper proposes an LDO linear regulator characterized by high power supply rejection ratio (PSR) and rapid transient response. The design of this LDO emphasizes low power consumption and minimal inrush current while incorporating advanced techniques to enhance PSR and stability across varying frequencies. Despite its compact footprint and low-power profile, this LDO achieves remarkable PSR across a broad spectrum of frequencies. To achieve swift transient response, the proposed design integrates variable biasing and transient boost capacitance. The variable bias structure enhances the slew rate and PSR of the LDO, contributing to its overall performance optimization. Additionally, the strategic placement and utilization of transient-boost capacitance leverage its voltage characteristics to bolster transient response without introducing additional quiescent current, thereby further enhancing circuit stability.

Dynamic modeling and identification of a reluctance synchronous machine parameters

This article discusses an identification and modeling approach of a reluctance synchronous motor (RSM) based on the running rotor technique. The applied flux linkage approximation functions reflect the self-saturation and cross-saturation effects, and the applied mathematical model is continuous and differentiable. The proper design of the experiment is discussed, and relevant recommendations are made to ensure the mitigation of procedural mistakes in the experiments. A detailed analysis of the impact of configuration faults on the obtained experimental data is provided, considering distortions in the obtained flux linkage and inductance surfaces. Considering the achieved model accuracy, a novel model evaluation considering the achieved model accuracy technique based on transient current response is proposed.

Transient response mitigation using type-2 fuzzy controller optimized by grey wolf optimizer in converter high voltage direct current

Long high voltage direct current (HVDC) transmission link is commonly used to transmit electrical energy via land or under-sea cable. The long HVDC avoids reactive power losses (RPL) and power stability problems (PSP). On the contrary, the RPL and PSP phenomena occur in long high voltage alternative current-link (HVAC) caused by the high reactive component in the HVAC-link. However, the HVDC produces a high and slow transient current response (TCR) on the high value of the up-ramp rate. Interval type-2 fuzzy (IT2F) control on converter-side HVDC is proposed to mitigate this TCR problem. The IT2F is optimized by grey wolf optimizer (GWO) to adjust input-output IT2F parameters optimally. The performance of IT2F-GWO is assessed by the minimum value of integral time squared error (ITSE), peak overshoot, and settling time of the TCR. The IT2FC-GWO performance is validated by the performance of IT2F control that is optimized by genetic algorithm (IT2F-GA) and proportional integral (PI) controller. Simulation results show that the IT2F-GWO performs better with small ITSE, low peak overshoot, and shorter settling times than competing controllers.

Performance improvement of a standalone PV system using supercapacitors: modeling and energy management

Standalone photovoltaic (PV) systems are the most common and practical application in remote areas and communities far from the power grid. However, in the case of supplying a pulsating load with only a battery as a storage unit, their performance degraded. Therefore, hybrid electrical energy storage (HEES) systems represent a viable solution. This paper investigates the impact of utilizing a supercapacitor (SC) to work cooperatively with a battery storage unit to enhance the overall system behavior. Two scenarios of battery storage systems with/without SC are considered. A comprehensive modeling and sizing approach is established and presented in detail. Then, an energy management system (EMS) is proposed to enhance the HEES system’s performance. A proportional-integral (PI)-based controller is designed and examined to control the power electronic converters and hence improve energy management. The HEES system operation is simulated and evaluated using MATLAB/Simulink to feed a pulsating load, where the drawn pulsated load current is composed of two components: one component is supplied by battery, and the other component is fed from SC. Finally, the performance of the two hybrid configurations is evaluated in terms of battery voltage and current fluctuations, transient response, and load voltage and current ripples. The obtained results demonstrate the effectiveness of introducing SCs into HEES system.

Experiment on long-term forecasting of geomagnetic activity based on nonlocal correlations

The experiment was performed on the use of advanced macroscopic nonlocal correlations to forecast slow random fluctuations of the Dst index of geomagnetic activity. The global maximum correlation of Dst with the signal of the electrode detector reaches 0.97, which is sufficient for the forecast, and its time shift corresponds to the advance of the detector signal relative to Dst by 329 days. The large magnitude of the time shift is due to the slow diffusion mechanism of entanglement swapping between the detector and the source. At the same time, the position of the global maximum of the correlation function coincides with the position of the global minimum of the entropy independence function, which confirms its undistorted by possible nonlinearity of the relationship and determines the optimal lead time of the forecast. Long series of test forecasts Dst have been calculated using data from a nonlocal correlation detector with a fixed lead time using three methods: current regression, current impulse transient response and current neural network. The accuracy of the forecasts is sufficient for all practical purposes.

LR-MPIBS: A LoRa-Based Maritime Position-Indicating Beacon System

Human marine activities are becoming increasingly frequent. The adverse marine environment has led to an increase in man overboard incidents, resulting in significant losses of life and property. After a drowning accident, the accurate location information of the drowning victim can help improve the success rate of rescue. In this paper, we explore a LoRa-based Maritime Position-Indicating Beacon System (LR-MPIBS). A low-power drowning detection circuit is designed in LR-MPIBS to detect drowning accidents in a timely manner after a person falls into the water. The instantaneous high current of the LoRa RF can lower the supply voltage and cause other modules to work abnormally. A fast current transient response circuit is proposed to solve the problem. LR-MPIBS includes a power ripple suppression circuit that can reduce the measurement errors and operational abnormalities caused by power ripple interference. We explore the impedance matching law of LoRa RF circuits through simulation experiments to improve the quality of LoRa communication. A data processing algorithm for personnel drift trajectory is proposed to alleviate the challenges caused by the raw positioning data with large deviations and high communication cost. The experimental results show that LR-MPIBS can automatically start and actively alarm within 3 s after a person falls into the water. The positioning cold start time is less than 50 s. The performance of communication distance is more than 5 km. The endurance of LR-MPIBS is 25 h (with a 30 s communication cycle).

Unveiling transient current response in bilayer oxide-based physical reservoirs for time-series data analysis.

Physical reservoirs employed to map time-series data and analyze extracted features have attracted interest owing to their low training cost and mitigated interconnection complexity. This study reports a physical reservoir based on a bilayer oxide-based dynamic memristor. The proposed device exhibits a nonlinear current response and short-term memory (STM), satisfying the requirements of reservoir computing (RC). These characteristics are validated using a compact model to account for resistive switching (RS) via the dynamic evolution of the internal state variable and the relocation of oxygen vacancies. Mathematically, the transient current response can be quantitatively described according to a simple set of equations to correlate the theoretical framework with experimental results. Furthermore, the device shows significant reliability and ability to distinguish 4-bit inputs and four diverse neural firing patterns. Therefore, this work shows the feasibility of implementing physical reservoirs in hardware and advances the understanding of the dynamic response.

Impact of heavy ions on a-Si:H/PolySi bilayer thin film transistors with Schottky barrier source and drain based on Nickel Silicide

This study investigates the influence of heavy ion irradiation on thin film transistors (TFTs) based on an a-Si:H/PolySi active layer and Schottky barrier-based source and drain. Through the use of Technology Computer-Aided Design (TCAD) simulations, we analyze the impact on device performance. We examine the ambipolar device characteristics by varying the thickness of the active layer (Poly-Si) and studying the corresponding physics. Our results reveal that reducing the active layer thickness from 140 to 80 nm decreases the magnitude of the threshold voltage (|VT|) for both nMOS and pMOS operating voltages. Additionally, the subthreshold slope is reduced for both nMOS and pMOS as the active layer thickness is decreased from 140 to 80 nm.Further, we investigated the transient response of the drain current to heavy ion irradiation in the sensitive regions across the Schottky barrier-based source and drain. We specifically analyze the phenomenon of bipolar amplification for various Linear Energy Transfer (LET) values, ranging from 0.1 MeV cm2/mg to 100 MeV cm2/mg. Our findings indicate that increasing the LET values from 0.1 MeV cm2/mg to 100 MeV cm2/mg results in amplified bipolar behavior and a drain current overshoot of over 10 % for both pMOS and nMOS operating voltages. To summarize, this work highlights the effects of heavy ion irradiation on TFTs with an a-Si:H/PolySi active layer and Schottky barrier-based source and drain. The study explores the influence of active layer thickness on device characteristics and demonstrates the transient response of drain current under different LET values. These findings contribute to a better understanding of the behavior and performance of TFTs subjected to heavy ion irradiation.

Characterization of trap evolution in GaN-based HEMTs under pulsed stress

In this paper, the evolution of traps in GaN-based high-electron-mobility transistors under pulsed thermal stress and the combined effect of thermal stress and electrical stress are studied. By applying impulse stresses of different powers to the device, collecting transient current response curves, and accurately extracting the time constant and absolute peak changes of the traps by employing the Bayesian inverse convolution theory time constant spectral technique, we analyzed the evolution of the traps under the action of impulse stress and clarified the influence and degradation mechanism of the thermal stress, as well as the combined action of thermal stress and electrical stress, on the evolution of traps. The results show that under pulsed stress, the decrease in electron mobility with increasing temperature leads to a decrease in device drain current, and the degradation of the device is exacerbated owing to channel hot-electron injection.

Dynamic Neural-Based Model Predictive Voltage Controller for an Interleaved Boost Converter With Adaptive Constraint Tuning

in recent years, interleaved current-fed boost dc converters consisting of a voltage multiplier and an active clamp circuit have been interested because of their good features like low input currents, and output voltages ripple high voltage-gains. Then developing more effective modeling and control techniques is important to increase their performance. In modeling section, it has been tried to estimate system model using the real data and dynamic neural networks with reducing number of variables. In control section there are constraints on control signal and its changing rate and in the proposed dynamic neural-based model predictive control (NMPC) controller, control signal changes constraint has been calculated adaptively. The proposed NMPC has been applied on system in online form and experimental results have been compared to the basic NMPC and a PI controllers. The output voltage have been specified for two loads with different input voltage. The experimental results show that their current transient response has smaller current peak and output voltage has smaller overshoot when load and voltage change. Output voltage steady-state response also has smaller oscillations about 2 volts for using proposed NMPC.

Photonic Physical Reservoir Computing with Tunable Relaxation Time Constant.

Recent years have witnessed a rising demand for edge computing, and there is a need for methods to decrease the computational cost while maintaining a high learning performance when processing information at arbitrary edges. Reservoir computing using physical dynamics has attracted significant attention. However, currently, the timescale of the input signals that can be processed by physical reservoirs is limited by the transient characteristics inherent to the selected physical system. This study used an Sn-doped In2 O3 /Nb-doped SrTiO3 junction to fabricate a memristor that could respond to both electrical and optical stimuli. The results show that the timescale of the transient current response of the device could be controlled over several orders of magnitude simply by applying a small voltage. The computational performance of the device as a physical reservoir is evaluated in an image classification task, demonstrating that the learning accuracy could be optimized by tuning the device to exhibit appropriate transient characteristics according to the timescale of the input signals. These results are expected to provide deeper insights into the photoconductive properties of strontium titanate, as well as support the physical implementation of computingsystems.

Adaptive neural network control of DC–DC power converter

This article proposes a novel Zernike radial neural network based adaptive control architecture for the closed-loop control of output DC voltage in DC-DC buck power converter. The proposed combination of novel Zernike radial neural network estimator and the adaptive backstepping controller effectively compensates for wide range of perturbations affecting the converter system, in an online manner. The closed loop stability of the DC-DC buck power converter with the proposed neuro-adaptive backstepping controller is proven by Lyapunov stability criterion. Numerical simulations are conducted to examine the effectiveness of the proposed controller under start-up response and step changes in the load, source voltage and reference output voltage. Furthermore, the simulation findings are validated by conducting extensive real-time investigation on a laboratory prototype, under a wide range of operating points. The results obtained shows a significant improvement in the transient response of both output voltage and inductor current of the converter, relative to the relevant control methods proposed in the recent past.

Time Transients with Inductive Loop Traces in Metal Halide Perovskites

AbstractMetal halide perovskites are archetypal ionic‐electronic materials with great prospects for optoelectronic applications. Among the rich variety of physics exhibited by ionic‐electronic conduction, here, those most relevant to optoelectronic devices in which ionic mechanisms introduce a kinetic delay in the electronic phenomena are analyzed. The attention is focused on the inductive loop features and a dynamical model is developed to describe the corresponding complex multiscale dynamics in the time domain under experimental conditions, finally explaining the fundamental structure of the current transient responses in halide perovskite semiconductors. Based on complex capacitive and inductive patterns extensively studied in impedance measurements, an adequate interpretation of time domain methods capable of monitoring charge‐carrier dynamics is produced. Therefore, this methodology identifies the characteristic parameters of all types of transient dynamics in metal halide perovskites, providing a suitable connection of correlated techniques, including impedance and chronoamperometric experiments, toward a robust interpretation of the device response. The scope of the method is fairly general, since these counterintuitive transient effects are observable not only in metal halide perovskites, but also in multiple materials and processes, mainly in different research fields pertaining to electrochemistry and electronics.

Understanding the influence of cation and anion migration on perovskite light-emitting diodes via transient response

Despite the rapid progress demonstrated in the efficiency of Perovskite light-emitting diodes (PeLEDs) in the past few years, ion migration has challenged the practical applications of these devices with undesirable hysteresis and degradation effect. Mobile ions in PeLEDs induced many unique and fast transient phenomena occurring on the time scale of microseconds to seconds and it is still far from clear how the underlying physical mechanism of ion motion-induced variation relates to the device performance. Therefore, in this work, we employ an ionic Drift–Diffusion Model (DDM) to evaluate measuring transient current response in a time scale of sub-seconds. The results show that spatial redistribution of ions within the perovskite results in dynamic electric field variation, which in turn, affects charge carrier injection and distribution. Moreover, the time delay between anion and cation migration leads to an unequal rate of charge carrier injection, hence the multi-stage behavior of the current–time response. It is also realized that the potential barrier of charge injection due to cation and anion accumulation at perovskite interfaces with electron and hole transporting layers reduces. Therefore, the facilitation of charge injection favors radiative recombination, and improved IQEs are expected at higher ion densities. It is found that the current–time response of the device gives beneficial information on cation and anion migration time scales. Choosing an appropriate scan rate in accordance with cation-related slow migration time is the first step to achieving reliable measurement procedures and hysteresis-free PeLED.

Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

Non-toxic, stable Cs3Bi2Br9 halide perovskite films prepared using a one-step solution method have become the active layer of resistive switching memory. Here, we control the nucleation and growth of Cs3Bi2Br9 perovskite by introducing an appropriate amount of HBr to adjust the supersaturation of the perovskite precursor solution, thus improving the film formation quality and optimizing the device performance. The memory prepared for this film has a significant bipolar resistive behavior with a high switching ratio of 105, a cycle time of 300 and a retention time of 104 s. In addition, the current transient response of the device under pulsed voltage is investigated. By different the pulse voltage parameters (pulse amplitude, duration and time interval) to study the variation of the device current value, the term "TJUT" is finally encoded and decoded using different the number of pulses and repetitions.