Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

Abstract

Non-toxic, stable Cs3Bi2Br9 halide perovskite films prepared using a one-step solution method have become the active layer of resistive switching memory. Here, we control the nucleation and growth of Cs3Bi2Br9 perovskite by introducing an appropriate amount of HBr to adjust the supersaturation of the perovskite precursor solution, thus improving the film formation quality and optimizing the device performance. The memory prepared for this film has a significant bipolar resistive behavior with a high switching ratio of 105, a cycle time of 300 and a retention time of 104 s. In addition, the current transient response of the device under pulsed voltage is investigated. By different the pulse voltage parameters (pulse amplitude, duration and time interval) to study the variation of the device current value, the term "TJUT" is finally encoded and decoded using different the number of pulses and repetitions.