Ever since global warming emerged as a serious issue, the development of promising thermoelectric materials has been one of the main hot topics of material science. In this work, we provide an in-depth understanding of the thermoelectric properties of X_2YH_2 monolayers (X=Si, Ge; Y=P, As, Sb, Bi) using the density functional theory combined with the Boltzmann transport equation. The results indicate that the monolayers have very low lattice thermal conductivities in the range of 0.09−0.27 Wm^{-1}K^{-1} at room temperature, which are correlated with the atomic masses of primitive cells. Ge_2PH_2 and Si_2SbH_2 possess the highest mobilities for hole (1894 cm^2V^{-1}s^{-1}) and electron (1629 cm^2V^{-1}s^{-1}), respectively. Si_2BiH_2 shows the largest room-temperature figure of merit, ZT=2.85 in the n-type doping ( sim 3times 10^{12} cm^{-2}), which is predicted to reach 3.49 at 800 K. Additionally, Si_2SbH_2 and Si_2AsH_2 are found to have considerable ZT values above 2 at room temperature. Our findings suggest that the mentioned monolayers are more efficient than the traditional thermoelectric materials such as Bi_2Te_3 and stimulate experimental efforts for novel syntheses and applications.
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